STB60NE03L-10

更新时间： 2024-11-25 22:06:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	101K
描述
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

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数据手册

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STB60NE03L-10 数据手册

STB60NE03L-10

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STB60NE03L-10

30 V

< 0.010 Ω

60 A

■

TYPICAL R_DS(on)= 0.007 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 ^oC

APPLICATION ORIENTED

CHARACTERIZATION

■

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

D²PAK

TO-263

(suffix ”T4”)

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturingreproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_DGR

V_GS

I_D

± 15

I_D

_DM(• )

240

120

0.8

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

W/^oC

V/ns

^oC

dv/dt

T_stg

T_j

Peak Diode Recovery voltage slope

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(1) I_SD≤ 60 A,di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, T ≤ T_JMAX

1/8

December 1997

12 3 4 5 6 7 8

中文翻译

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与STB60NE03L-10相关器件

型号	品牌	获取价格	描述	数据表
STB60NE03L-10T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NE03L-12	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.009 OHM - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET
STB60NE03L-12T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NE06-1	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB60NE06-16	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB60NE06-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NE06L-16	STMICROELECTRONICS	获取价格	N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET
STB60NE06L-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NF03L	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET
STB60NF03LT4	STMICROELECTRONICS	获取价格	60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3