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STB60NE06-16 PDF预览

STB60NE06-16

更新时间: 2024-11-22 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
9页 117K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB60NE06-16 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
雪崩能效等级(Eas):400 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):60 A最大漏极电流 (ID):60 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

STB60NE06-16 数据手册

 浏览型号STB60NE06-16的Datasheet PDF文件第2页浏览型号STB60NE06-16的Datasheet PDF文件第3页浏览型号STB60NE06-16的Datasheet PDF文件第4页浏览型号STB60NE06-16的Datasheet PDF文件第5页浏览型号STB60NE06-16的Datasheet PDF文件第6页浏览型号STB60NE06-16的Datasheet PDF文件第7页 
STB60NE06-16  
N - CHANNEL ENHANCEMENT MODE  
” SINGLE FEATURE SIZE ” POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB60NE06-1  
60 V  
< 0.016 Ω  
60 A  
TYPICAL RDS(on) = 0.013 Ω  
EXCEPTIONAL dV/dt CAPABILTY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
HIGH dV/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
1
D2PAK  
TO-263  
(Suffix ”T4”)  
DESCRIPTION  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ” Single Feature Size  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
V
V
60  
± 20  
V
60  
A
ID  
42  
A
I
DM()  
240  
A
Ptot  
Total Dissipation at Tc = 25 oC  
150  
W
Derating Factor  
1
W/oC  
V/ns  
oC  
oC  
dV/dt(1) Peak Diode Recovery voltage slope  
6
Tstg  
Storage Temperature  
-65 to 175  
Tj  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 60 A, di/dt 200 A/µs, VDD V(BR)DSS, TJ TJMAX  
1/9  
January 1998  

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