Datasheet > STB60NE03L-12T4

STB60NE03L-12T4

更新时间： 2024-11-25 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	51K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 60A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB60NE03L-12T4 数据手册

STB60NE03L-12

N-CHANNEL 30V - 0.009

Ω - 60A D PAK

STripFET POWER MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STB60NE03L-12

30 V

<0.012 Ω

60 A

■

TYPICAL R (on) = 0.009 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETETIVE AVALANCHE DATA AT 100 C

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

D PAK

TO-263

(suffix“T4”)

175 C OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

■

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

This Power MOSFET is the latest development of

STMicroelectronics unique “Single Feature Size ” strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

remarkable

manufacturing

reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

±20

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(•)

Drain Current (pulsed)

240

Total Dissipation at T = 25°C

100

tot

Derating Factor

0.67

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 175

175

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I [ 60 A, di/dt m300A/ms, V [ V

, Tj [ T

(BR)DSS JMA

November 2000

1/6

This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6

中文翻译

下载PDF

与STB60NE03L-12T4相关器件

型号	品牌	获取价格	描述	数据表
STB60NE06-1	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB60NE06-16	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB60NE06-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NE06L-16	STMICROELECTRONICS	获取价格	N - CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET POWER MOSFET
STB60NE06L-16T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 60A I(D) \| TO-263AB
STB60NF03L	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET
STB60NF03LT4	STMICROELECTRONICS	获取价格	60A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
STB60NF06	STMICROELECTRONICS	获取价格	N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET
STB60NF06_06	STMICROELECTRONICS	获取价格	N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST
STB60NF06-1	STMICROELECTRONICS	获取价格	N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK ST