Datasheet > STAP57030

STAP57030

更新时间： 2024-10-28 20:49:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		局域网放大器光电二极管晶体管
页数	文件大小	规格书
13页	251K
描述
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, PLASTIC PACKAGE-2

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技术参数
数据手册

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STAP57030 技术参数

生命周期：	Obsolete	包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.84
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	65 V	最大漏极电流 (Abs) (ID)：	4 A
最大漏极电流 (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDFM-F2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	165 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	52.8 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

STAP57030 数据手册

STAP57030

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ P = 30 W with 14 dB gain @ 945 MHz /

OUT

28 V

■ ST advanced PowerSO-10RF / STAP package

Description

The STAP57030 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz.

STAP1

AM02217

Figure 1.

Pin connection

STAP57030 boasts the excellent gain, linearity

and reliability of ST’s latest LDMOS technology

mounted in STAP1 plastic RF power package.

DRAIN

STAP package has been specially optmized for

RF needs and offers excellent performance and

ease of assembly.

Mounting recommendations are available in

www.st.com (look for application note AN1294)

GATE

SOURCE

AM02217

Table 1.

Device summary

Order codes

Package

Packaging

STAP57030

STAP1

Tube

June 2009

Doc ID 15865 Rev 1

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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