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STAP57030 PDF预览

STAP57030

更新时间: 2024-10-28 20:49:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网放大器光电二极管晶体管
页数 文件大小 规格书
13页 251K
描述
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, PLASTIC PACKAGE-2

STAP57030 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDFM-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:165 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):52.8 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

STAP57030 数据手册

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STAP57030  
RF power transistor, LdmoST plastic family  
N-channel enhancement-mode lateral MOSFETs  
Features  
Excellent thermal stability  
Common source configuration  
P = 30 W with 14 dB gain @ 945 MHz /  
OUT  
28 V  
ST advanced PowerSO-10RF / STAP package  
Description  
The STAP57030 is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 28 V in common source mode at frequencies of  
up to 1 GHz.  
STAP1  
AM02217  
Figure 1.  
Pin conection  
STAP57030 boasts the excellent gain, linearity  
and reliability of ST’s latest LDMOS technology  
mounted in STAP1 plastic RF power package.  
DRAIN  
STAP package has been specially optmized for  
RF needs and offers excellent performance and  
ease of assembly.  
Mounting recommendations are available in  
www.st.com (look for application note AN1294)  
GATE  
SOURCE  
AM02217  
Table 1.  
Device summary  
Order codes  
Package  
Packaging  
STAP57030  
STAP1  
Tube  
June 2009  
Doc ID 15865 Rev 1  
1/13  
www.st.com  
13  

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