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START540

更新时间: 2024-10-27 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 73K
描述
NPN Silicon RF Transistor

START540 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:LOW NOISE
外壳连接:EMITTER最大集电极电流 (IC):0.04 A
集电极-发射极最大电压:4.5 V配置:SINGLE
最高频带:C BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):45000 MHz
Base Number Matches:1

START540 数据手册

 浏览型号START540的Datasheet PDF文件第2页浏览型号START540的Datasheet PDF文件第3页浏览型号START540的Datasheet PDF文件第4页浏览型号START540的Datasheet PDF文件第5页浏览型号START540的Datasheet PDF文件第6页浏览型号START540的Datasheet PDF文件第7页 
START540  
NPN Silicon RF Transistor  
LOW NOISE FIGURE: NFmin = 0.9dB  
@ 1.8GHz, 5mA, 2V  
HIGH OUTPUT IP3 = 24dBm  
@ 1.8GHz, 20mA, 2V  
GOOD RUGGEDNESS BVceo = 4.5V  
TRANSITION FREQUENCY 45GHz  
ULTRA MINIATURE SOT343 PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START540TR  
540  
DESCRIPTION  
APPLICATIONS  
The START540 is a member of the START family  
that provide the market with the state of the art of RF  
silicon process. Manufacturated in the third  
generation of ST proprietary bipolar process, it  
offers the highest linearity with excellent Noise  
Figure for 4.5V breakdown voltage(BVceo).  
It reaches performance level only achieved with  
GaAs products before.  
LNA FOR GSM/DCS, DECT, PDC, PCS,  
PCN, CDMA, W-CDMA  
GENERAL PURPOSE 500MHz-5GHz  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
4.5  
ceo  
V
15  
V
cbo  
V
ebo  
1.5  
V
I
40  
4
mA  
mA  
mW  
c
I
Base current  
b
P
Total dissipation, T = 101  
180  
tot  
s
o
T
stg  
Storage temperature  
-65 to 150  
C
o
T
Max. operating junction temperature  
150  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
270  
C/W  
July, 3 2002  
1/7  

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