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START620

更新时间: 2024-10-28 04:02:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
5页 27K
描述
NPN SiGe RF Transistor

START620 数据手册

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START620  
NPN SiGe RF Transistor  
PRELIMINARY DATA  
LOW NOISE FIGURE: NFmin = 0.8dB  
@ 1.8GHz, 5mA, 2V  
COMPRESSION P1dB = 13dBm  
@ 1.8GHz, 20mA, 2V  
ULTRA MINIATURE SOT343 PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START620TR  
620  
DESCRIPTION  
The START620 is a member of the START family  
that provide market with the state of the art of RF  
silicon process. It uses ST’s Silicon Germanium  
technology. This technology offers ft’s of up to  
45GHz and Fmax’s of over 60GHz. The START620  
offers the best mix of gain and NF for given  
breakdown voltage(BVceo = 3.3V).  
APPLICATIONS  
LNA FOR GSM/DCS, CDMA, WCDMA,  
BLUETOOTH  
GENERAL PURPOSE 500MHz-5GHz  
It reaches performance level only achieved with  
GaAs products before.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
3.3  
ceo  
V
10  
V
cbo  
V
ebo  
1.5  
V
I
40  
4
mA  
mA  
mW  
c
I
Base current  
b
P
Total dissipation, T = 101  
135  
tot  
s
o
T
stg  
Storage temperature  
-65 to 150  
C
o
T
Max. operating junction temperature  
150  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
270  
C/W  
May, 3 2002  
1/5  

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