Datasheet > STAR1000

STAR1000

更新时间： 2024-10-28 04:02:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		传感器图像传感器
页数	文件大小	规格书
21页	630K
描述
1M Pixel Radiation Hard CMOS Image Sensor

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STAR1000 数据手册

STAR1000

STAR1000 1M Pixel Radiation Hard

CMOS Image Sensor

Key Features

The STAR1000 sensor has the following characteristics:

• Integrating 3-transistor Active Pixel Sensor.

• 1024 by 1024 pixels on 15 µm pitch.

• Radiation tolerant design.

• On-chip double sampling circuit to cancel Fixed Pattern

Noise.

• Electronic shutter.

• Read out rate: up to 11 full frames per second.

• Region Of Interest (ROI) windowing.

• On-chip 10-bit ADC.

• Programmable gain amplifier.

• Ceramic JLCC-84 package.

• Available with BK7G18 glass and with N₂filled cavity.

Sensor Description

The STAR1000 is a CMOS image sensor with 1024 by 1024

pixels on a 15 mm pitch. It features on-chip Fixed Pattern

Noise (FPN) correction, a programmable gain amplifier, and a

10-bit Analog-to-Digital Converter (ADC).

All circuits are designed using the radiation tolerant design

rules for CMOS image sensors, to allow a high tolerance

against total dose effects.

Registers that are directly accessed by the external controller

contain the X- and Y- addresses of the pixels to be read. This

architecture provides flexible operation and allows different

operation modes such as (multiple) windowing, subsampling,

etc.

Two versions od sensors are available: STAR1000 and

STAR1000BK7. The STAR1000 has a quartz glass lid and the

cavity between the die and the lid is filled with air. The

STAR1000BK7 has a BK7G18 glass lid and the cavity is filled

with N₂which increases the temperature operating range.

Cypress Semiconductor Corporation

Document Number: 38-05714 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 5, 2007

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