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START420 PDF预览

START420

更新时间: 2024-10-27 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 72K
描述
NPN Silicon RF Transistor

START420 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:LOW NOISE
外壳连接:EMITTER最大集电极电流 (IC):0.04 A
集电极-发射极最大电压:4.5 V配置:SINGLE
最高频带:C BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

START420 数据手册

 浏览型号START420的Datasheet PDF文件第2页浏览型号START420的Datasheet PDF文件第3页浏览型号START420的Datasheet PDF文件第4页浏览型号START420的Datasheet PDF文件第5页浏览型号START420的Datasheet PDF文件第6页浏览型号START420的Datasheet PDF文件第7页 
START420  
NPN Silicon RF Transistor  
LOW NOISE FIGURE: NFmin = 1.05dB  
@ 1.8GHz, 5mA, 2V  
COMPRESSION P1dB = 12.5dBm  
@ 1.8GHz, 20mA, 2V  
ULTRA MINIATURE SOT343 PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START420TR  
420  
DESCRIPTION  
The START420 is a member of the START family  
that provide market with the state of the art of RF  
silicon process. Manufacturated in the third  
generation of ST proprietary bipolar process, it  
offers the best mix of gain and NF for given  
breakdown voltage(BVceo).  
APPLICATIONS  
LNA FOR GSM/DCS, DECT, PDC, PCS,  
PCN  
PREDRIVER FOR DECT  
It reaches performance level only achieved with  
GaAs products before.  
GENERAL PURPOSE 500MHz-5GHz  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
4.5  
ceo  
V
15  
V
cbo  
V
ebo  
1.5  
V
I
40  
4
mA  
mA  
mW  
c
I
Base current  
b
P
Total dissipation, T = 101  
180  
tot  
s
o
T
stg  
Storage temperature  
-65 to 150  
C
o
T
Max. operating junction temperature  
150  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
270  
C/W  
July, 3 2002  
1/7  

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