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START499

更新时间: 2024-10-27 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体小信号双极晶体管射频小信号双极晶体管光电二极管功效放大器
页数 文件大小 规格书
7页 73K
描述
NPN Silicon RF Transistor

START499 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:ULTRA MINIATURE, SC-70, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
Is Samacsys:N其他特性:HIGH EFFICIENCY
外壳连接:EMITTER最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:4.5 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.9 W
认证状态:Not Qualified子类别:BIP RF Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):42000 MHz
Base Number Matches:1

START499 数据手册

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START499  
NPN Silicon RF Transistor  
HIGH EFFICIENCY  
HIGH GAIN  
LINEAR AND NON LINEAR OPERATION  
TRANSITION FREQUENCY 42GHz  
ULTRA MINIATURE SOT343 (SC70) PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START499TR  
499  
DESCRIPTION  
START499 is a product of the START family that  
provide the market with a Si state-of-art RF process.  
Manufactured in St 3rd generation bipolar process, it  
offers the highest power, gain and efficiency in  
SOT343 for given breakdown voltage (BVceo).  
Suitable for a wide range of applications up to 5GHz,  
it shows a performance level achieved before with  
GaAs products only.  
APPLICATIONS  
PA FOR DECT OR PHS  
PA STAGE FOR WIRELESS LAN AND  
BLUETOOTH @ 2.5GHz  
UHF-VHF PRE POWER AMPLIFIER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
4.5  
Unit  
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
V
V
ceo  
V
15  
cbo  
V
ebo  
1.5  
V
I
600  
32  
mA  
mA  
mW  
c
I
Base current  
b
o
P
600  
-65 to 150  
150  
tot  
Total dissipation at T = 60 C  
S
o
T
stg  
Storage temperature  
C
o
T
Max. operating junction temperature  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
150  
C/W  
July, 3 2002  
1/7  

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