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START450 PDF预览

START450

更新时间: 2024-10-27 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
7页 73K
描述
NPN Silicon RF Transistor

START450 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SC-70, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
外壳连接:EMITTER最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:4.5 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:C BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.45 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):42000 MHz

START450 数据手册

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START450  
NPN Silicon RF Transistor  
COMPRESSION POINT P1dB=19dBm @ 1.8GHz  
TRANSITION FREQUENCY 42GHz  
HIGH LINEARITY  
ULTRA MINIATURE SOT343(SC70) PACKAGE  
SOT343 (SC70)  
ORDER CODE  
BRANDING  
START450TR  
450  
DESCRIPTION  
The START450 is a member of the START family that  
provide the state of the art of RF silicon process to the  
market. Manufacturated in the third generation of ST  
proprietary bipolar process, it offers the best mix of  
gain and NF for given breakdown voltage(BVceo).  
It offers performance level only archived with GaAs  
products before.  
APPLICATIONS  
LNA FOR GSM/DCS, DECT, PCS, PCN,  
CDMA, W-CDMA  
PREDRIVER FOR DECT  
GENERAL PURPOSE 500MHz-5GHz  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
4.5  
Unit  
V
V
Collector emitter voltage  
Collector base voltage  
Emitter base voltage  
Collector current  
ceo  
V
15  
V
cbo  
V
ebo  
1.5  
V
I
100  
mA  
mA  
mW  
c
I
Base current  
10  
b
P
Total dissipation, T = TBD  
450  
tot  
s
o
T
stg  
Storage temperature  
-65 to 150  
C
o
T
Max. operating junction temperature  
150  
j
C
ABSOLUTE MAXIMUM RATINGS  
o
R
thjs  
Thermal Resistance Junction soldering point  
MAX  
120  
C/W  
November, 20 2002  
1/7  

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