Datasheet > STAR1000_09

STAR1000_09

更新时间： 2024-10-28 06:14:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		传感器图像传感器
页数	文件大小	规格书
21页	1157K
描述
1M Pixel Radiation Hard CMOS Image Sensor

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STAR1000_09 数据手册

STAR1000

1M Pixel Radiation Hard CMOS Image

Sensor

Features

The STAR1000 sensor has the following characteristics:

■ Integrating 3-transistor Active Pixel Sensor.

■ 1024 by 1024 pixels on 15 mm pitch.

■ Radiation tolerant design.

■ On-chip double sampling circuit to cancel Fixed Pattern Noise.

■ Electronic shutter.

■ Read out rate: up to 11 full frames per second.

■ Region of Interest (ROI) windowing.

■ On-chip 10-bit ADC.

■ Programmable gain amplifier.

■ Ceramic JLCC-84 package.

■ Available with BK7G18 glass and with N2 filled cavity

Sensor Description

The STAR1000 is a CMOS image sensor with 1024 by 1024

pixels on a 15 mm pitch. It features on-chip Fixed Pattern Noise

(FPN) correction, a programmable gain amplifier, and a 10-bit

Analog-to-Digital Converter (ADC).

All circuits are designed using the radiation tolerant design rules

for CMOS image sensors, to allow a high tolerance against total

dose effects.

Registers that are directly accessed by the external controller

contain the X- and Y- addresses of the pixels to be read. This

architecture provides flexible operation and allows different

operation modes such as (multiple) windowing, subsampling,

etc.

Three versions of sensors are available: STAR1000,

STAR1000BK7, and STAR1000SP. The STAR1000 has a quartz

glass lid, and the cavity between the die and the glass lid is filled

with air. The STAR1000BK7 has a BK7G18 glass lid, and the

cavity is filled with N₂which increases the temperature operating

range. The STAR1000SP is similar to the STAR1000BK7, it has

a BK7G18 glass lid, and a N₂filled cavity, but is also screened

and tested to space qualified device standards.

Cypress Semiconductor Corporation

Document Number: 38-05714 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised July 20, 2009

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