Datasheet > STAR250BK7

STAR250BK7

更新时间： 2024-10-28 04:02:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		传感器图像传感器
页数	文件大小	规格书
24页	466K
描述
250K Pixel Radiation Hard CMOS Image Sensor

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数据手册

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STAR250BK7 数据手册

CYIS1SM0250-AA

CYIS1SM0250-AA STAR250 250K Pixel

Radiation Hard CMOS Image Sensor

Key Features (continued)

Features

Parameter

Typical Value

The STAR250 sensor is a CMOS Active Pixel Sensor,

designed for application in Optical Inter-Satellite Link beam

trackers. The STAR250 is part of broader range of applications

such as space-borne systems like sun sensing and star

tracking. It features 512 by 512 pixels on a 25 µm pitch, on chip

Fixed Pattern Noise (FPN) correction, a programmable gain

amplifier, and a 10bit ADC. Flexible operating (multiple

windowing, subsampling) is possible by direct addressable X-

and Y- register.

Proton Radiation

Tolerance

1% of pixels has an increase in

dark current > 1 nA/cm²after

3*10^10 protons at 11.7 MeV

SEL Threshold

Color Filter Array

Packaging

> 80 MeV cm³mg^-1

Mono

84 pin JLCC

< 350 mW

The sensor has an outstanding radiation tolerance that is

observed by using proprietary technology modifications and

design techniques. Two versions of sensors are available,

STAR250 and STAR250BK7. STAR250 has a quartz glass lid

and air in the cavity. The STAR250BK7 has a BK7G18 glass

lid with anti reflective coating. The cavity is filled with N₂

increasing the temperature operating range.

Power Consumption

Applications

• Satellites

• Spacecraft monitoring

• Nuclear inspection

Key Features

Parameter

Optical Format

Active Pixels

Pixel Size

Typical Value

1 Inch

512 x 512

25 µm

Shutter Type

Electronic

8 MHz

Maximum Data Rate /

Master Clock

Frame Rate

Up to 30 full frames/s

10 bit

ADC Resolution

Sensitivity

3340 V.m²/W.s

74dB (5000:1)

76 e^-

Dynamic Range

kTC Noise

Dark Current

4750 e^-/s at RT

Supply Voltage

Operating Temperature

0°C - +65°C (STAR250)

-40°C - +85°C (STAR250BK7)

Gamma Total Dose

Radiation tolerance

Increase in average dark current

< 1 nA/cm²after 3 MRad

Image operation with dark signal

< 1V/s after 10 Mrad

demonstrated (Co60)

Cypress Semiconductor Corporation

Document Number: 38-05713 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised December 12, 2006

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