Datasheet > SST26VF016_13

SST26VF016_13

更新时间： 2024-11-26 12:31:27

品牌	Logo	应用领域
SST		闪存
页数	文件大小	规格书
39页	386K
描述
Serial Quad I/O SQI Flash Memory

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SST26VF016_13 数据手册

Serial Quad I/O (SQI) Flash Memory

SST26VF016 / SST26VF032

A Microchip Technology Company

Data Sheet

The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device utilizes

a 4-bit multiplexed I/O serial interface to boost performance while maintaining the

compact form factor of standard serial flash devices. Operating at frequencies

reaching 80 MHz, the SST26VF016 / SST26VF032 enables minimum latency

execute-in-place (XIP) capability without the need for code shadowing on an

SRAM. The device’s high performance and small footprint make it the ideal choice

for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications

and other portable electronic products. Further benefits are achieved with SST’s

proprietary, high-performance CMOS SuperFlash® technology, which significantly

improves performance and reliability, and lowers power consumption for high

bandwidth, compact designs.

Features

• Single Voltage Read and Write Operations

• End-of-Write Detection

– 2.7-3.6V

– Software polling the BUSY bit in status register

• Serial Interface Architecture

• Flexible Erase Capability

– Nibble-wide multiplexed I/O’s with SPI-like serial com-

– Uniform 4 KByte sectors

mand structure

– Four 8 KByte top parameter overlay blocks

– Four 8 KByte bottom parameter overlay blocks

– Two 32 KByte overlay blocks (one each top and bottom)

– Uniform 64 KByte overlay blocks

- SST26VF016 – 30 blocks

- Mode 0 and Mode 3

– Single-bit, SPI backwards compatible

- Read, High-Speed Read, and JEDEC ID Read

• High Speed Clock Frequency

- SST26VF032 – 62 blocks

– 80 MHz

- 320 Mbit/s sustained data rate

• Write-Suspend

– Suspend program or Erase operation to access another

block/sector

• Burst Modes

– Continuous linear burst

• Software Reset (RST) mode

• Software Write Protection

– 8/16/32/64 Byte linear burst with wrap-around

• Index Jump

– Block-Locking

- 64 KByte blocks, two 32 KByte blocks, and eight 8

KByte parameter blocks

– Jump to address index within 256 Byte Page

– Jump to address index within 64 KByte Block

– Jump to address index in another 64 KByte Block

• Security ID

• Superior Reliability

– One-Time Programmable (OTP) 256 bit, Secure ID

- 64 bit Unique, factory pre-programmed identifier

- 192 bit user-programmable

– Endurance: 100,000 cycles

– Greater than 100 years data retention

• Low Power Consumption:

• Temperature Range

– Active Read current: 12 mA (typical @ 80 MHz)

– Standby current: 8 µA (typical)

– Industrial: -40°C to +85°C

• Packages Available

• Fast Erase and Byte-Program:

– 8-contact WSON (6mm x 5mm)

– 8-lead SOIC (200 mil)

– Chip-Erase time: 35 ms (typical)

– Sector-/Block-Erase time: 18 ms (typical)

• All devices are RoHS compliant

• Page-Program

– 256 Bytes per page

– Fast Page Program time in 1 ms (typical)

www.microchip.com

DS-25017A

04/11

12 3 4 5 6 7...39

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与SST26VF016_13相关器件

型号	品牌	获取价格	描述	数据表
SST26VF016-80-5I-QAE	SILICON	获取价格	Flash, 16MX1, PDSO8, 5 X 6 MM, ROHS COMPLIANT, WSON-8
SST26VF016-80-5I-QE	SST	获取价格	Serial Quad I/O (SQI) Flash Memory
SST26VF016-80-5I-S2AE	MICROCHIP	获取价格	16M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST26VF016-80-5I-S2AE	SILICON	获取价格	Flash, 16MX1, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST26VF016-80-5I-S2AE-T	MICROCHIP	获取价格	IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,SOP,8PIN,PLASTIC
SST26VF016-80-5I-S2E	SST	获取价格	Serial Quad I/O (SQI) Flash Memory
SST26VF016B	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104I/SM	MICROCHIP	获取价格	IC FLASH 2.7V PROM, Programmable ROM
SST26VF016B-104I/SN	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

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