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SST26VF016B-104I/SM

更新时间： 2024-11-23 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
80页 2963K
描述
IC FLASH 2.7V PROM, Programmable ROM

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中文翻译

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SST26VF016B-104I/SM 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SOP, SOP8,.3Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
Factory Lead Time：11 weeks风险等级：1.4
启动块：BOTTOM/TOP最大时钟频率 (fCLK)：104 MHz
数据保留时间-最小值：100耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：5.26 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：1
湿度敏感等级：3功能数量：1
端子数量：8字数：16777216 words
字数代码：16000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX1封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.3
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified反向引出线：NO
座面最大高度：2.03 mm串行总线类型：SPI
最大待机电流：0.000025 A子类别：Flash Memories
最大压摆率：0.025 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn) - annealed
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：5.25 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST26VF016B-104I/SM 数据手册

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SST26VF016B  
2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory  
• Security ID  
Features  
- One-Time Programmable (OTP) 2 KByte,  
Secure ID  
• Single Voltage Read and Write Operations  
- 2.7-3.6V or 2.3-3.6V  
- 64 bit unique, factory pre-programmed  
identifier  
• Serial Interface Architecture  
- Nibble-wide multiplexed I/O’s with SPI-like serial  
command structure  
- User-programmable area  
• Temperature Range  
- Mode 0 and Mode 3  
- Industrial: -40°C to +85°C  
- Extended: -40°C to +105°C  
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol  
• High Speed Clock Frequency  
• Automotive AECQ-100 Grade 2 and Grade 3  
• Packages Available  
- 2.7-3.6V: 104 MHz max  
- 2.3-3.6V: 80 MHz max  
- 8-contact WDFN (6mm x 5mm)  
- 8-lead SOIJ (5.28 mm)  
- 8-lead SOIC (3.90 mm)  
• Burst Modes  
- Continuous linear burst  
- 8/16/32/64 Byte linear burst with wrap-around  
• All devices are RoHS compliant  
• Superior Reliability  
- Endurance: 100,000 Cycles (min)  
- Greater than 100 years Data Retention  
Product Description  
The Serial Quad I/O™ (SQI™) family of flash-memory  
devices features a six-wire, 4-bit I/O interface that  
allows for low-power, high-performance operation in a  
low pin-count package. SST26VF016B also supports  
full command-set compatibility to traditional Serial  
Peripheral Interface (SPI) protocol. System designs  
using SQI flash devices occupy less board space and  
ultimately lower system costs.  
• Low Power Consumption:  
- Active Read current: 15 mA (typical @ 104 MHz)  
- Standby Current: 15 µA (typical)  
• Fast Erase Time  
- Sector/Block Erase: 18 ms (typ), 25 ms (max)  
- Chip Erase: 35 ms (typ), 50 ms (max)  
• Page-Program  
All members of the 26 Series, SQI family are manufac-  
tured with proprietary, high-performance CMOS Super-  
Flash® technology. The split-gate cell design and thick-  
oxide tunneling injector attain better reliability and man-  
ufacturability compared with alternate approaches.  
- 256 Bytes per page in x1 or x4 mode  
• End-of-Write Detection  
- Software polling the BUSY bit in status register  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
SST26VF016B significantly improves performance and  
reliability, while lowering power consumption. These  
devices write (Program or Erase) with a single power  
supply of 2.3-3.6V. The total energy consumed is a  
function of the applied voltage, current, and time of  
application. Since for any given voltage range, the  
SuperFlash technology uses less current to program  
and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less  
than alternative flash memory technologies.  
- Four 8 KByte top and bottom parameter overlay  
blocks  
- One 32 KByte top and bottom overlay blocks  
- Uniform 64 KByte overlay blocks  
• Write-Suspend  
- Suspend Program or Erase operation to access  
another block/sector  
• Software Reset (RST) mode  
• Software Write Protection  
SST26VF016B is offered in 8-contact WDFN (6 mm x  
5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC  
(3.90 mm). See Figures 2-1 through 2-3 for pin assign-  
ments.  
- Individual-Block Write Protection with permanent  
lock-down capability  
- 64 KByte blocks, two 32 KByte blocks, and  
eight 8 KByte parameter blocks  
- Read Protection on top and bottom 8 KByte  
parameter blocks  
2014-2017 Microchip Technology Inc.  
DS20005262D-page 1  
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中文翻译

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SST26VF016B-104I/SM 替代型号

型号 品牌 替代类型 描述 数据表
SST26VF016B-104I/MF MICROCHIP

完全替代

 2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016BT-104I/MF MICROCHIP

完全替代

 IC FLASH 2.7V PROM, Programmable ROM

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