Datasheet > SST26VF032B-104I/SM

SST26VF032B-104I/SM

更新时间： 2024-11-20 00:50:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
77页	927K
描述
2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory

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SST26VF032B / SST26VF032BA

2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte, Secure ID

- 64 bit unique, factory pre-programmed identifier

- User-programmable area

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

• Serial Interface Architecture

• Temperature Range

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C

- Mode 0 and Mode 3

• Packages Available

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIJ (5.28 mm)

- 24-ball TBGA (6mm x 8mm)

- 2.7-3.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

• All devices are RoHS compliant

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

Product Description

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that allows for

low-power, high-performance operation in a low pin-count

package. SST26VF032B/032BA also support full com-

mand-set compatibility to traditional Serial Peripheral Inter-

face (SPI) protocol. System designs using SQI flash devices

occupy less board space and ultimately lower system costs.

• Superior Reliability

- Endurance: 100,000 Cycles (min)

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Fast Erase Time

All members of the 26 Series, SQI family are manufactured

with proprietary, high-performance CMOS SuperFlash®

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches.

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

SST26VF032B/032BA significantly improve performance

and reliability, while lowering power consumption. These

devices write (Program or Erase) with a single power supply

of 2.3-3.6V. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program opera-

tion is less than alternative flash memory technologies.

- Software polling the BUSY bit in status register

• Flexible Erase Capability

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay block

- Uniform 64 KByte overlay blocks

• Write-Suspend

SST26VF032B/032BA are offered in 8-contact WDFN

(6 mm x 5 mm), 8-lead SOIJ (5.28 mm), and 24-ball

TBGA(6mm x 8mm). See Figure 2-2 for pin assignments.

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

Two configurations are available upon order.

SST26VF032B default at power-up has the WP# and

HOLD# pins enabled, and the SIO2 and SIO3 pins dis-

- Individual-Block Write Protection with permanent

lock-down capability

abled,

initiate

SPI-protocol

operations.

SST26VF032BA default at power-up has the WP# and

HOLD# pins disabled, and the SIO2 and SIO3 pins

enabled, to initiate Quad I/O operations. See “I/O Con-

figuration (IOC)” on page 12 for more information about

configuring WP#/HOLD# and SIO2/SIO3 pins.

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

 2013-2016 Microchip Technology Inc.

DS20005218E-page 1

12 3 4 5 6 7...77

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SST26VF032B-104I/SM 替代型号

型号	品牌	替代类型	描述	数据表
SST26VF032BA-104I/SM	MICROCHIP	完全替代	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST25VF016B-50-4I-S2AF	MICROCHIP	类似代替	16 Mbit SPI Serial Flash
SST25VF032B-80-4I-S2AF	MICROCHIP	类似代替	32 Mbit SPI Serial Flash

与SST26VF032B-104I/SM相关器件

型号	品牌	获取价格	描述	数据表
SST26VF032B-104I/TD	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032B-104V/MF	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032B-104V/SM	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BA	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BA-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BA-104I/SM	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BAT-104I/MF	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BAT-104I/SM	MICROCHIP	获取价格	2.5V/3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF032BEUI	MICROCHIP	获取价格	The SST26VF032BEUI Serial Quad I/O (SQI) flash device is factory-programmed with EUI-48?
SST26VF032BEUI-104I/SM	MICROCHIP	获取价格	FLASH 3V PROM

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