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SST25VF016B-50-4I-S2AF PDF预览

SST25VF016B-50-4I-S2AF

更新时间: 2024-11-19 12:48:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存存储内存集成电路光电二极管PC时钟
页数 文件大小 规格书
32页 315K
描述
16 Mbit SPI Serial Flash

SST25VF016B-50-4I-S2AF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:1.4
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:2372671Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:S2A (8-pin SOIC)Samacsys Released Date:2020-02-09 17:40:56
Is Samacsys:N最大时钟频率 (fCLK):50 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:S-PDSO-G8JESD-609代码:e4
长度:5.275 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:1
湿度敏感等级:1功能数量:1
端子数量:8字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16MX1封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:SQUARE封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:2.16 mm
串行总线类型:SPI最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:5.275 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

SST25VF016B-50-4I-S2AF 数据手册

 浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第2页浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第3页浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第4页浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第5页浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第6页浏览型号SST25VF016B-50-4I-S2AF的Datasheet PDF文件第7页 
16 Mbit SPI Serial Flash  
SST25VF016B  
A Microchip Technology Company  
Data Sheet  
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface  
that allows for a low pin-count package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF016B devices are enhanced with  
improved operating frequency and lower power consumption. SST25VF016B SPI  
serial flash memories are manufactured with SST's proprietary, high-performance  
CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnel-  
ing injector attain better reliability and manufacturability compared with alternate  
approaches.  
Features  
• Single Voltage Read and Write Operations  
• Auto Address Increment (AAI) Programming  
– 2.7-3.6V  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
• Serial Interface Architecture  
• End-of-Write Detection  
– SPI Compatible: Mode 0 and Mode 3  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• High Speed Clock Frequency  
– Up to 80 MHz  
• Hold Pin (HOLD#)  
• Superior Reliability  
– Suspends a serial sequence to the memory  
without deselecting the device  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Write Protection (WP#)  
• Low Power Consumption:  
– Enables/Disables the Lock-Down function of the status  
register  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
• Software Write Protection  
• Flexible Erase Capability  
– Write protection through Block-Protection bits in status  
register  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
• Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
• Fast Erase and Byte-Program:  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• Packages Available  
– 8-lead SOIC (200 mils)  
– 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25044A  
08/11  

SST25VF016B-50-4I-S2AF 替代型号

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