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SST26VF032-80-5I-QAE-T

更新时间： 2024-11-23 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 356K
描述
IC,SERIAL EEPROM,NOR FLASH,4MX8,CMOS,LLCC,8PIN,PLASTIC

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SST26VF032-80-5I-QAE-T 技术参数

是否Rohs认证：符合生命周期：Not Recommended
包装说明：SON, SOLCC8,.25Reach Compliance Code：compliant
风险等级：5.68Is Samacsys：N
最大时钟频率 (fCLK)：80 MHz数据保留时间-最小值：100
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-N8
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：8端子数量：8
字数：4194304 words字数代码：4000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：4MX8封装主体材料：PLASTIC/EPOXY
封装代码：SON封装等效代码：SOLCC8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL电源：3/3.3 V
认证状态：Not Qualified串行总线类型：SPI
最大待机电流：0.000015 A子类别：Flash Memories
最大压摆率：0.03 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL类型：NOR TYPE
写保护：SOFTWAREBase Number Matches：1

SST26VF032-80-5I-QAE-T 数据手册

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Serial Quad I/O (SQI) Flash Memory  
SST26VF016 / SST26VF032  
A Microchip Technology Company  
Data Sheet  
The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device utilizes  
a 4-bit multiplexed I/O serial interface to boost performance while maintaining the  
compact form factor of standard serial flash devices. Operating at frequencies  
reaching 80 MHz, the SST26VF016 / SST26VF032 enables minimum latency  
execute-in-place (XIP) capability without the need for code shadowing on an  
SRAM. The device’s high performance and small footprint make it the ideal choice  
for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications  
and other portable electronic products. Further benefits are achieved with SST’s  
proprietary, high-performance CMOS SuperFlash® technology, which significantly  
improves performance and reliability, and lowers power consumption for high  
bandwidth, compact designs.  
Features  
• Single Voltage Read and Write Operations  
• End-of-Write Detection  
– 2.7-3.6V  
– Software polling the BUSY bit in status register  
• Serial Interface Architecture  
• Flexible Erase Capability  
– Nibble-wide multiplexed I/O’s with SPI-like serial com-  
– Uniform 4 KByte sectors  
mand structure  
– Four 8 KByte top parameter overlay blocks  
– Four 8 KByte bottom parameter overlay blocks  
– Two 32 KByte overlay blocks (one each top and bottom)  
– Uniform 64 KByte overlay blocks  
- SST26VF016 – 30 blocks  
- Mode 0 and Mode 3  
– Single-bit, SPI backwards compatible  
- Read, High-Speed Read, and JEDEC ID Read  
• High Speed Clock Frequency  
- SST26VF032 – 62 blocks  
– 80 MHz  
- 320 Mbit/s sustained data rate  
• Write-Suspend  
– Suspend program or Erase operation to access another  
block/sector  
• Burst Modes  
– Continuous linear burst  
• Software Reset (RST) mode  
• Software Write Protection  
– 8/16/32/64 Byte linear burst with wrap-around  
• Index Jump  
– Block-Locking  
- 64 KByte blocks, two 32 KByte blocks, and eight 8  
KByte parameter blocks  
– Jump to address index within 256 Byte Page  
– Jump to address index within 64 KByte Block  
– Jump to address index in another 64 KByte Block  
• Security ID  
• Superior Reliability  
– One-Time Programmable (OTP) 256 bit, Secure ID  
- 64 bit Unique, factory pre-programmed identifier  
- 192 bit user-programmable  
– Endurance: 100,000 cycles  
– Greater than 100 years data retention  
• Low Power Consumption:  
• Temperature Range  
– Active Read current: 12 mA (typical @ 80 MHz)  
– Standby current: 8 µA (typical)  
– Industrial: -40°C to +85°C  
• Packages Available  
• Fast Erase and Byte-Program:  
– 8-contact WSON (6mm x 5mm)  
– 8-lead SOIC (200 mil)  
– Chip-Erase time: 35 ms (typical)  
– Sector-/Block-Erase time: 18 ms (typical)  
• All devices are RoHS compliant  
• Page-Program  
– 256 Bytes per page  
– Fast Page Program time in 1 ms (typical)  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS-25017A  
04/11  
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