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SST26VF032-80-5I-S2AE

更新时间： 2024-11-23 15:52:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 385K
描述
32M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8

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SST26VF032-80-5I-S2AE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended零件包装代码：SOIC
包装说明：SOP, SOP8,.3针数：8
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51Factory Lead Time：7 weeks
风险等级：8.17最大时钟频率 (fCLK)：80 MHz
数据保留时间-最小值：100耐久性：100000 Write/Erase Cycles
JESD-30 代码：S-PDSO-G8JESD-609代码：e3
长度：5.275 mm内存密度：33554432 bit
内存集成电路类型：FLASH内存宽度：1
湿度敏感等级：3功能数量：1
端子数量：8字数：33554432 words
字数代码：32000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32MX1封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.3
封装形状：SQUARE封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：2.16 mm
串行总线类型：SPI最大待机电流：0.000015 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：5.275 mm写保护：SOFTWARE
Base Number Matches：1

SST26VF032-80-5I-S2AE 数据手册

 浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第2页浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第3页浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第4页浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第5页浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第6页浏览型号SST26VF032-80-5I-S2AE的Datasheet PDF文件第7页 
Serial Quad I/O (SQI) Flash Memory  
SST26VF016 / SST26VF032  
A Microchip Technology Company  
Data Sheet  
The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device utilizes  
a 4-bit multiplexed I/O serial interface to boost performance while maintaining the  
compact form factor of standard serial flash devices. Operating at frequencies  
reaching 80 MHz, the SST26VF016 / SST26VF032 enables minimum latency  
execute-in-place (XIP) capability without the need for code shadowing on an  
SRAM. The device’s high performance and small footprint make it the ideal choice  
for mobile handsets, Bluetooth® headsets, optical disk drives, GPS applications  
and other portable electronic products. Further benefits are achieved with SST’s  
proprietary, high-performance CMOS SuperFlash® technology, which significantly  
improves performance and reliability, and lowers power consumption for high  
bandwidth, compact designs.  
Features  
• Single Voltage Read and Write Operations  
• End-of-Write Detection  
– 2.7-3.6V  
– Software polling the BUSY bit in status register  
• Serial Interface Architecture  
• Flexible Erase Capability  
– Nibble-wide multiplexed I/O’s with SPI-like serial com-  
– Uniform 4 KByte sectors  
mand structure  
– Four 8 KByte top parameter overlay blocks  
– Four 8 KByte bottom parameter overlay blocks  
– Two 32 KByte overlay blocks (one each top and bottom)  
– Uniform 64 KByte overlay blocks  
- SST26VF016 – 30 blocks  
- Mode 0 and Mode 3  
– Single-bit, SPI backwards compatible  
- Read, High-Speed Read, and JEDEC ID Read  
• High Speed Clock Frequency  
- SST26VF032 – 62 blocks  
– 80 MHz  
- 320 Mbit/s sustained data rate  
• Write-Suspend  
– Suspend program or Erase operation to access another  
block/sector  
• Burst Modes  
– Continuous linear burst  
• Software Reset (RST) mode  
• Software Write Protection  
– 8/16/32/64 Byte linear burst with wrap-around  
• Index Jump  
– Block-Locking  
- 64 KByte blocks, two 32 KByte blocks, and eight 8  
KByte parameter blocks  
– Jump to address index within 256 Byte Page  
– Jump to address index within 64 KByte Block  
– Jump to address index in another 64 KByte Block  
• Security ID  
• Superior Reliability  
– One-Time Programmable (OTP) 256 bit, Secure ID  
- 64 bit Unique, factory pre-programmed identifier  
- 192 bit user-programmable  
– Endurance: 100,000 cycles  
– Greater than 100 years data retention  
• Low Power Consumption:  
• Temperature Range  
– Active Read current: 12 mA (typical @ 80 MHz)  
– Standby current: 8 µA (typical)  
– Industrial: -40°C to +85°C  
• Packages Available  
• Fast Erase and Byte-Program:  
– 8-contact WSON (6mm x 5mm)  
– 8-lead SOIC (200 mil)  
– Chip-Erase time: 35 ms (typical)  
– Sector-/Block-Erase time: 18 ms (typical)  
• All devices are RoHS compliant  
• Page-Program  
– 256 Bytes per page  
– Fast Page Program time in 1 ms (typical)  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS-25017A  
04/11  
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SST26VF032-80-5I-S2AE 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF032B-80-4I-S2AF MICROCHIP

完全替代

 32 Mbit SPI Serial Flash
SST26VF032BT-104I/SM MICROCHIP

类似代替

 FLASH 2.7V PROM

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