Datasheet > SST26VF016B-104V/SN

SST26VF016B-104V/SN

更新时间： 2024-11-27 00:54:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		时钟栅光电二极管内存集成电路
页数	文件大小	规格书
77页	2875K
描述
2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

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SST26VF016B-104V/SN 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SOP, SOP8,.25	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
Factory Lead Time：	16 weeks	风险等级：	1.61
Samacsys Description：	SST26VF016B-104V/SN, SPI Split Gate Flash Memory Chip, 2M x 8 bit 16Mbit, 2.7 → 3.6 V, 8-Pin, SOIC	最大时钟频率 (fCLK)：	104 MHz
数据保留时间-最小值：	100	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	4.9 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	1
湿度敏感等级：	3	功能数量：	1
端子数量：	8	字数：	16777216 words
字数代码：	16000000	工作模式：	SYNCHRONOUS
最高工作温度：	105 °C	最低工作温度：	-40 °C
组织：	16MX1	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	SERIAL	峰值回流温度（摄氏度）：	260
编程电压：	2.7 V	反向引出线：	NO
座面最大高度：	1.75 mm	串行总线类型：	SPI
最大待机电流：	0.000025 A	最大压摆率：	0.025 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn) - annealed	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3.9 mm
写保护：	HARDWARE/SOFTWARE	Base Number Matches：	1

SST26VF016B-104V/SN 数据手册

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SST26VF016B

2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

• Security ID

Features

- One-Time Programmable (OTP) 2 KByte,

Secure ID

• Single Voltage Read and Write Operations

- 2.7-3.6V or 2.3-3.6V

- 64 bit unique, factory pre-programmed

identifier

• Serial Interface Architecture

- Nibble-wide multiplexed I/O’s with SPI-like serial

command structure

- User-programmable area

• Temperature Range

- Mode 0 and Mode 3

- Industrial: -40°C to +85°C

- Extended: -40°C to +105°C

- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

• High Speed Clock Frequency

• Packages Available

- 2.7-2.6V: 104 MHz max

- 2.3-3.6V: 80 MHz max

- 8-contact WDFN (6mm x 5mm)

- 8-lead SOIJ (5.28 mm)

- 8-lead SOIC (3.90 mm)

• Burst Modes

- Continuous linear burst

- 8/16/32/64 Byte linear burst with wrap-around

• All devices are RoHS compliant

• Superior Reliability

Product Description

- Endurance: 100,000 Cycles (min)

The Serial Quad I/O™ (SQI™) family of flash-memory

devices features a six-wire, 4-bit I/O interface that

allows for low-power, high-performance operation in a

low pin-count package. SST26VF016B also supports

full command-set compatibility to traditional Serial

Peripheral Interface (SPI) protocol. System designs

using SQI flash devices occupy less board space and

ultimately lower system costs.

- Greater than 100 years Data Retention

• Low Power Consumption:

- Active Read current: 15 mA (typical @ 104 MHz)

- Standby Current: 15 µA (typical)

• Fast Erase Time

- Sector/Block Erase: 18 ms (typ), 25 ms (max)

- Chip Erase: 35 ms (typ), 50 ms (max)

All members of the 26 Series, SQI family are manufac-

tured with proprietary, high-performance CMOS Super-

Flash® technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and man-

ufacturability compared with alternate approaches.

• Page-Program

- 256 Bytes per page in x1 or x4 mode

• End-of-Write Detection

- Software polling the BUSY bit in status register

• Flexible Erase Capability

SST26VF016B significantly improves performance and

reliability, while lowering power consumption. These

devices write (Program or Erase) with a single power

supply of 2.3-3.6V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

- Uniform 4 KByte sectors

- Four 8 KByte top and bottom parameter overlay

blocks

- One 32 KByte top and bottom overlay blocks

- Uniform 64 KByte overlay blocks

• Write-Suspend

- Suspend Program or Erase operation to access

another block/sector

• Software Reset (RST) mode

• Software Write Protection

SST26VF016B is offered in 8-contact WDFN (6 mm x

5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC

(3.90 mm). See Figures 2-1 through 2-3 for pin assign-

ments.

- Individual-Block Write Protection with permanent

lock-down capability

- 64 KByte blocks, two 32 KByte blocks, and

eight 8 KByte parameter blocks

- Read Protection on top and bottom 8 KByte

parameter blocks

 2014-2015 Microchip Technology Inc.

DS20005262C-page 1

12 3 4 5 6 7...77

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SST26VF016B-104V/SN 替代型号

型号	品牌	替代类型	描述	数据表
SST26VF016BT-104V/SN	MICROCHIP	完全替代	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104I/SN	MICROCHIP	类似代替	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016BT-104I/SN	MICROCHIP	类似代替	IC FLASH 2.7V PROM, Programmable ROM

与SST26VF016B-104V/SN相关器件

型号	品牌	获取价格	描述	数据表
SST26VF016BEUI	MICROCHIP	获取价格	The SST26VF016BEUI Serial Quad I/O (SQI) flash device is factory-programmed with EUI-48? a
SST26VF016BEUI-104I/SN	MICROCHIP	获取价格	FLASH 3V PROM
SST26VF016BT-104I/MF	MICROCHIP	获取价格	IC FLASH 2.7V PROM, Programmable ROM
SST26VF016BT-104I/SM	MICROCHIP	获取价格	IC FLASH 2.7V PROM, Programmable ROM
SST26VF016BT-104I/SN	MICROCHIP	获取价格	IC FLASH 2.7V PROM, Programmable ROM
SST26VF016BT-104V/MF	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016BT-104V/SM	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016BT-104V/SN	MICROCHIP	获取价格	2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF020A	MICROCHIP	获取价格	The SST26VF020A Serial Quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial
SST26VF032	SST	获取价格	Serial Quad I/O SQI Flash Memory

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