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SST26VF016-80-5I-QAE PDF预览

SST26VF016-80-5I-QAE

更新时间： 2024-09-19 07:25:27
品牌 Logo 应用领域
芯科 - SILICON 时钟光电二极管内存集成电路
页数 文件大小 规格书
39页 1265K
描述
Flash, 16MX1, PDSO8, 5 X 6 MM, ROHS COMPLIANT, WSON-8

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SST26VF016-80-5I-QAE 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：SON包装说明：HVSON,
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.41最大时钟频率 (fCLK)：80 MHz
JESD-30 代码：R-PDSO-N8JESD-609代码：e3
长度：6 mm内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：16777216 words字数代码：16000000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：16MX1
封装主体材料：PLASTIC/EPOXY封装代码：HVSON
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.8 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：5 mm
Base Number Matches：1

SST26VF016-80-5I-QAE 数据手册

 浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第2页浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第3页浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第4页浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第5页浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第6页浏览型号SST26VF016-80-5I-QAE的Datasheet PDF文件第7页 
Serial Quad I/O (SQI) Flash Memory  
SST26VF016 / SST26VF032  
Data Sheet  
The SST26VF016 / SST26VF032 Serial Quad I/O™ (SQI™) flash device uti-  
lizes a 4-bit multiplexed I/O serial interface to boost performance while main-  
taining the compact form factor of standard serial flash devices. Operating at  
frequencies reaching 80 MHz, the SST26VF016 / SST26VF032 enables mini-  
mum latency execute-in-place (XIP) capability without the need for code shad-  
owing on an SRAM. The device’s high performance and small footprint make it  
the ideal choice for mobile handsets, Bluetooth® headsets, optical disk drives,  
GPS applications and other portable electronic products. Further benefits are  
achieved with SST’s proprietary, high-performance CMOS SuperFlash® tech-  
nology, which significantly improves performance and reliability, and lowers  
power consumption for high bandwidth, compact designs.  
Features  
• Single Voltage Read and Write Operations  
• End-of-Write Detection  
– 2.7-3.6V  
– Software polling the BUSY bit in status register  
• Serial Interface Architecture  
• Flexible Erase Capability  
– Nibble-wide multiplexed I/O’s with SPI-like serial com-  
– Uniform 4 KByte sectors  
mand structure  
– Four 8 KByte top parameter overlay blocks  
– Four 8 KByte bottom parameter overlay blocks  
– Two 32 KByte overlay blocks (one each top and bottom)  
– Uniform 64 KByte overlay blocks  
- SST26VF016 – 30 blocks  
- Mode 0 and Mode 3  
– Single-bit, SPI backwards compatible  
- Read, High-Speed Read, and JEDEC ID Read  
• High Speed Clock Frequency  
- SST26VF032 – 62 blocks  
– 80 MHz  
- 320 Mbit/s sustained data rate  
• Write-Suspend  
– Suspend program or Erase operation to access another  
block/sector  
• Burst Modes  
– Continuous linear burst  
• Software Reset (RST) mode  
• Software Write Protection  
– 8/16/32/64 Byte linear burst with wrap-around  
• Index Jump  
– Block-Locking  
- 64 KByte blocks, two 32 KByte blocks, and eight 8  
KByte parameter blocks  
– Jump to address index within 256 Byte Page  
– Jump to address index within 64 KByte Block  
– Jump to address index in another 64 KByte Block  
• Security ID  
• Superior Reliability  
– One-Time Programmable (OTP) 256 bit, Secure ID  
- 64 bit Unique, factory pre-programmed identifier  
- 192 bit user-programmable  
– Endurance: 100,000 cycles  
– Greater than 100 years data retention  
• Low Power Consumption:  
• Temperature Range  
– Active Read current: 12 mA (typical @ 80 MHz)  
– Standby current: 8 µA (typical)  
– Industrial: -40°C to +85°C  
• Packages Available  
• Fast Erase and Byte-Program:  
– 8-contact WSON (6mm x 5mm)  
– 8-lead SOIC (200 mil)  
– Chip-Erase time: 35 ms (typical)  
– Sector-/Block-Erase time: 18 ms (typical)  
• All devices are RoHS compliant  
• Page-Program  
– 256 Bytes per page  
– Fast Page Program time in 1 ms (typical)  
©2010 Silicon Storage Technology, Inc.  
S71359-05-000  
06/10  
www.sst.com  
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与SST26VF016-80-5I-QAE相关器件

型号 品牌 获取价格 描述 数据表
SST26VF016-80-5I-QE SST

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 		Serial Quad I/O (SQI) Flash Memory
SST26VF016-80-5I-S2AE MICROCHIP

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 		16M X 1 FLASH 2.7V PROM, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST26VF016-80-5I-S2AE SILICON

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 		Flash, 16MX1, PDSO8, 0.200 INCH, ROHS COMPLIANT, SOIC-8
SST26VF016-80-5I-S2AE-T MICROCHIP

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 		IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,SOP,8PIN,PLASTIC
SST26VF016-80-5I-S2E SST

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 		Serial Quad I/O (SQI) Flash Memory
SST26VF016B MICROCHIP

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 		2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104I/MF MICROCHIP

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 		2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104I/SM MICROCHIP

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 		IC FLASH 2.7V PROM, Programmable ROM
SST26VF016B-104I/SN MICROCHIP

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 		2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
SST26VF016B-104V/MF MICROCHIP

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 		2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory

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