是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.3 A | 最大漏源导通电阻: | 1.75 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6N7002KFU,LF | TOSHIBA |
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MOSFET 2N-CH 60V 0.3A | |
SSM6N7002KFULF(T | TOSHIBA |
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Small Signal Field-Effect Transistor | |
SSM6N813R | TOSHIBA |
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N-ch x 2 MOSFET, 100 V, 3.5 A, 0.112 Ω@10V, T | |
SSM6N815R | TOSHIBA |
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N-ch x 2 MOSFET, 100 V, 2.0 A, 0.103 Ω@10V, T | |
SSM6N951L | TOSHIBA |
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N-ch x 2 Common-drain MOSFET, 12 V, 8 A, 0.00 | |
SSM6P05FU | TOSHIBA |
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Power Management Switch High Speed Switching Applications | |
SSM6P05FU_07 | TOSHIBA |
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Power Management Switch | |
SSM6P05U | ETC |
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TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 200MA I(D) | TSOP | |
SSM6P09FU | TOSHIBA |
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High Speed Switching Applications | |
SSM6P09FU_07 | TOSHIBA |
获取价格 |
High Speed Switching Applications |