Datasheet > SSM6N7002KFULF(T

SSM6N7002KFULF(T

更新时间： 2024-02-23 01:01:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	221K
描述
Small Signal Field-Effect Transistor

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中文翻译

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SSM6N7002KFULF(T 技术参数

SSM6N7002KFU

MOSFETs Silicon N-Channel MOS (U-MOS-H)

SSM6N7002KFU

1. Applications

•

High-Speed Switching

2. Features

(1) AEC-Q101 qualified (Note 1)

(2) ESD(HBM) level 2 kV

(3) Low drain-source on-resistance

: RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)

RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)

RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

Note 1: For detail information, please contact to our sales.

3. Packaging and Internal Circuit

1: Source1

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

US6

Start of commercial production

2015-05

2017-01-12

Rev.2.0

12 3 4 5 6 7 8

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