Datasheet > SSM6679GM

SSM6679GM

更新时间： 2024-09-25 12:49:59

品牌	Logo	应用领域
SSC		/
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描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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SSM6679GM 数据手册

SSM6679GM

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

BV_DSS

R_DS(ON)

I_D

-30V

9mΩ

-14A

Simple Drive Requirement

Low On-resistance

Fast Switching Characteristic

SO-8

DESCRIPTION

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Pb-free; RoHS-compliant

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-30

Units

V_DS

V_GS

± 25

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-14

-8.9

-50

P_D@T_A=25℃

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

℃/W

08/10/2007 Rev.1.00

www.SiliconStandard.com

12 3 4 5

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