Datasheet > SSM6679M

SSM6679M

更新时间： 2024-09-25 09:04:47

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
4页	161K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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中文翻译

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SSM6679M 数据手册

SSM6679M

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Low on-resistance

BV_DSS

R_DS(ON)

I_D

-30V

9mΩ

-14A

Fast switching characteristics

SO-8

Description

Advanced power MOSFETs from Silicon Standard provide

the designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and industrial

surface-mount applications and is well suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

± 25

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=100°C

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-14

-8.9

-50

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Thermal Resistance Junction-ambient³

Value

Unit

Rthj-a

Max.

°C/W

Rev.2.02 4/06/2004

www.SiliconStandard.com

1 of 4

12 3 4

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