Datasheet > SPP17N80C3_08

SPP17N80C3_08

更新时间： 2024-11-23 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	401K
描述
CoolMOS Power Transistor Features New revolutionary high voltage technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SPP17N80C3_08 数据手册

SPP17N80C3

CoolMOS^®Power Transistor

Features

Product Summary

V _DS

800

0.29

• New revolutionary high voltage technology

• Extreme dv/dt rated

R _DS(on)max@ T_j= 25°C

Q _g,typ

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

PG-TO220-3

• Ultra low effective capacitances

CoolMOS^TM800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application ( i.e. active clamp forward )

Type

Package

Marking

SPP17N80C3

PG-TO220-3

17N80C3

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=3.4 A, V _DD=50 V

I _D=17 A, V _DD=50 V

Avalanche energy, single pulse

670

0.5

2),3)

E _AR

Avalanche energy, repetitive t _AR

I _AR

Avalanche current, repetitive t _AR

MOSFET dv /dt ruggedness

Gate source voltage

V _DS=0…640 V

static

dv /dt

V _GS

V/ns

±20

±30

227

-55 ... 150

AC (f >1 Hz)

T _C=25 °C

P _tot

Power dissipation

T _j, T _stg

Operating and storage temperature

Mounting torque

°C

M3 and M3.5 screws

page 1

Ncm

Rev. 2.9

2008-10-15

12 3 4 5 6 7...10

中文翻译

下载PDF

与SPP17N80C3_08相关器件

型号	品牌	获取价格	描述	数据表
SPP18P06P	INFINEON	获取价格	SIPMOS Power-Transistor
SPP18P06P H	INFINEON	获取价格	Infineon’s highly innovative OptiMOS™ familie
SPP18P06P_09	INFINEON	获取价格	SIPMOS® Power-Transistor Features P-Channel E
SPP18P06PG	INFINEON	获取价格	SIPMOS® Power-Transistor Features P-Channel E
SPP18P06PG_10	INFINEON	获取价格	SIPMOS Power-Transistor
SPP18P06PH	INFINEON	获取价格	Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Me
SPP18P06PHXK	INFINEON	获取价格	暂无描述
SPP18P06PHXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Me
SPP18P06PXK	INFINEON	获取价格	暂无描述
SPP1UL1000JLF	TTELEC	获取价格	Fibre Core Conformal Coated Wirewound Resistor