Datasheet > SPP18P06P H

SPP18P06P H

更新时间： 2024-09-29 11:16:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	571K
描述
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

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SPP18P06P H 数据手册

SPP18P06P H

SIPMOS^®Small-Signal-Transistor

Product Summary

Features

V_DS

-60

0.13

-18.7



• P-Channel

R_DS(on),max

I_D

• Enhancement mode

• Avalanche rated

• dv /dt rated

PG-TO220-3-1

• 175°C operating temperature

• Pb-free lead finishing; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Qualified according to AEC Q101

Type

Package

Tape and reel information

50pcs/tube

Marking

Lead free

PG-TO220-3

SPP18P06PH

Yes

18P06P

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

steady state

-18.7

I _D

T _A=25 °C

T _A=100 °C

T _A=25 °C

Continuous drain current

-13.2

I _D,pulse

-74.8

Pulsed drain current

E _AS

151

I _D=18.7 A, R _GS=25 

Avalanche energy, single pulse

Avalanche energy, periodic limited by

T_jmax

E _AR

I _D=18.7 A, V _DS=48 V,

di /dt =-200 A/µs,

-6

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

±20

Gate source voltage

Power dissipation

T _A=25 °C¹⁾

P _tot

81.1

T _j, T _stg

"-55 ... +175"

Class 1C( >1000V <2000V)

260 °C

Operating and storage temperature

ESD class

°C

Soldering temperature

55/150/56

IEC climatic category; DIN IEC 68-1

Rev1.92

page 1

2014-11-21

12 3 4 5 6 7...9

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