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SPP18P06PG_10 PDF预览

SPP18P06PG_10

更新时间: 2024-09-28 09:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 450K
描述
SIPMOS Power-Transistor

SPP18P06PG_10 数据手册

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SPP18P06P G  
SIPMOS® Power-Transistor  
Product Summary  
Features  
V DS  
-60  
0.13  
-18.7  
V
A
• P-Channel  
R DS(on),max  
I D  
• Enhancement mode  
• Avalanche rated  
• dv /dt rated  
PG-TO220-3  
• 175°C operating temperature  
Pb-free lead finishing; RoHS compliant  
Type  
Package  
Tape and reel information  
Marking Lead free  
18P06P Yes  
SPP18P06PG PG-TO220-3  
50pcs / tube  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
steady state  
-18.7  
I D  
T A=25 °C  
T A=100 °C  
T A=25 °C  
Continuous drain current  
A
-13.2  
I D,pulse  
E AS  
-74.8  
Pulsed drain current  
151  
I D=18.7 A, R GS=25  
Avalanche energy, single pulse  
mJ  
Avalanche energy, periodic limited by  
Tjmax  
E AR  
8
I D=18.7 A, V DS=48 V,  
di /dt =-200 A/µs,  
-6  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V
T
j,max=175 °C  
V GS  
±20  
Gate source voltage  
Power dissipation  
T A=25 °C1)  
P tot  
81.1  
W
T j, T stg  
"-55 ... +175"  
Operating and storage temperature  
ESD class  
°C  
260 °C  
Soldering temperature  
55/150/56  
IEC climatic category; DIN IEC 68-1  
Rev1.9  
page 1  
2010-04-12  

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