Datasheet > SPP18P06P_09

SPP18P06P_09

更新时间： 2024-11-15 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	454K
描述
SIPMOS® Power-Transistor Features P-Channel Enhancement mode

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中文翻译

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数据手册

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SPP18P06P_09 数据手册

SPP18P06P G

SIPMOS^®Power-Transistor

Product Summary

Features

V _DS

-60

0.13

-18.6

Ω

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

• Avalanche rated

• dv /dt rated

PG-TO220-3

• 175°C operating temperature

Pb-free lead finishing; RoHS compliant

Type

Package

Tape and reel information

Marking Lead free

18P06P Yes

SPP18P06PG PG-TO220-3

50pcs / tube

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

steady state

-18.7

I _D

T _A=25 °C

T _A=100 °C

T _A=25 °C

Continuous drain current

-13.2

I _D,pulse

E _AS

-74.8

Pulsed drain current

151

I _D=18.7 A, R _GS=25 Ω

Avalanche energy, single pulse

Avalanche energy, periodic limited by

T_jmax

E _AR

I _D=18.7 A, V _DS=48 V,

di /dt =-200 A/µs,

-6

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

±20

Gate source voltage

Power dissipation

T _A=25 °C¹⁾

P _tot

81.1

T _j, T _stg

"-55 ... +175"

Operating and storage temperature

ESD class

°C

260 °C

Soldering temperature

55/150/56

IEC climatic category; DIN IEC 68-1

Rev1.8

page 1

2009-04-14

12 3 4 5 6 7...9

中文翻译

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