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SPP18P06PG PDF预览

SPP18P06PG

更新时间: 2024-11-15 06:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 454K
描述
SIPMOS® Power-Transistor Features P-Channel Enhancement mode

SPP18P06PG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):151 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):18.7 A最大漏极电流 (ID):18.7 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):81.1 W最大脉冲漏极电流 (IDM):74.8 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

SPP18P06PG 数据手册

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SPP18P06P G  
SIPMOS® Power-Transistor  
Product Summary  
Features  
V DS  
-60  
0.13  
-18.6  
V
A
• P-Channel  
R DS(on),max  
I D  
• Enhancement mode  
• Avalanche rated  
• dv /dt rated  
PG-TO220-3  
• 175°C operating temperature  
Pb-free lead finishing; RoHS compliant  
Type  
Package  
Tape and reel information  
Marking Lead free  
18P06P Yes  
SPP18P06PG PG-TO220-3  
50pcs / tube  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
steady state  
-18.7  
I D  
T A=25 °C  
T A=100 °C  
T A=25 °C  
Continuous drain current  
A
-13.2  
I D,pulse  
E AS  
-74.8  
Pulsed drain current  
151  
I D=18.7 A, R GS=25  
Avalanche energy, single pulse  
mJ  
Avalanche energy, periodic limited by  
Tjmax  
E AR  
8
I D=18.7 A, V DS=48 V,  
di /dt =-200 A/µs,  
-6  
Reverse diode dv /dt  
dv /dt  
kV/µs  
V
T
j,max=175 °C  
V GS  
±20  
Gate source voltage  
Power dissipation  
T A=25 °C1)  
P tot  
81.1  
W
T j, T stg  
"-55 ... +175"  
Operating and storage temperature  
ESD class  
°C  
260 °C  
Soldering temperature  
55/150/56  
IEC climatic category; DIN IEC 68-1  
Rev1.8  
page 1  
2009-04-14  

SPP18P06PG 替代型号

型号 品牌 替代类型 描述 数据表
SPP18P06PHXKSA1 INFINEON

完全替代

Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Me
SPD18P06PGBTMA1 INFINEON

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Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Me

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