Datasheet > SPP17N80C3_07

SPP17N80C3_07

更新时间： 2024-11-23 06:13:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极
页数	文件大小	规格书
13页	585K
描述
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

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SPP17N80C3_07 数据手册

SPP17N80C3

SPA17N80C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

800

0.29

Ω

DS(on)

• Worldwide best R

in TO 220

DS(on)

PG-TO220-3-31 PG-TO220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

P-TO220-3-31

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP17N80C3

PG-TO220

Q67040-S4353

17N80C3

SPA17N80C3

PG-TO220-3-31 SP000216353

17N80C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP

SPA

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

670

I =3.4A, V =50V

Avalanche energy, repetitive t limited by T

0.5

jmax

I =17A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

208

Operating and storage temperature

-55...+150

°C

stg

Rev. 2.6

Page 1

2007-08-30

12 3 4 5 6 7...13

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