5秒后页面跳转
捷配首页

Datasheet > SMUN5113T1G
SMUN5113T1G PDF预览

SMUN5113T1G

更新时间： 2024-09-16 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
12页 148K
描述
Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

阅读下载

中文翻译

获取价格

SMUN5113T1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：1.49其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.31 W参考标准：AEC-Q101
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SMUN5113T1G 数据手册

 浏览型号SMUN5113T1G的Datasheet PDF文件第2页浏览型号SMUN5113T1G的Datasheet PDF文件第3页浏览型号SMUN5113T1G的Datasheet PDF文件第4页浏览型号SMUN5113T1G的Datasheet PDF文件第5页浏览型号SMUN5113T1G的Datasheet PDF文件第6页浏览型号SMUN5113T1G的Datasheet PDF文件第7页 
MUN2113, MMUN2113L,  
MUN5113, DTA144EE,  
DTA144EM3, NSBA144EF3  
Digital Transistors (BRT)  
R1 = 47 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
PNP Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
• Reduces Component Count  
G
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
1
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT−1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 1  
DTA144E/D  
1234567...12

中文翻译

下载PDF

SMUN5113T1G 替代型号

型号 品牌 替代类型 描述 数据表
RN2304(TE85L,F) TOSHIBA

功能相似

 TRANSISTOR PNP 50V 0.1A SC-70

与SMUN5113T1G相关器件

型号 品牌 获取价格 描述 数据表
SMUN5114DW1T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k
SMUN5114T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
SMUN5114T3G ONSEMI

获取价格

 		PNP Bipolar Digital Transistor (BRT)
SMUN5115DW1T1G ONSEMI

获取价格

 		10kΩ, ∞ kΩ Dual PNP Bias Resistor Transistors
SMUN5115T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 =  k
SMUN5116DW1T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 =  kOhm
SMUN5131DW1T1G ONSEMI

获取价格

 		Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
SMUN5133T1G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
SMUN5211DW SECOS

获取价格

 		NPN Multi-Chip Built-in Resistors Transistor
SMUN5211DW1T1G ONSEMI

获取价格

 		Dual NPN Bias Resistor Transistors

与SMUN5113T1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证