Datasheet > RN2304(TE85L,F)

RN2304(TE85L,F)

更新时间： 2024-11-24 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	455K
描述
TRANSISTOR PNP 50V 0.1A SC-70

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中文翻译

获取价格

技术参数
数据手册
替代型号

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RN2304(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	1.78	Base Number Matches：	1

RN2304(TE85L,F) 数据手册

RN2301~RN2306

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2301, RN2302, RN2303

RN2304, RN2305, RN2306

Unit: mm

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1301 to RN1306

Equivalent Circuit

Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2301

RN2302

RN2303

RN2304

RN2305

RN2306

4.7

USM

2.2

4.7

JEDEC

―

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 0.006g

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN2301 to RN2306

Collector-emitter voltage

−50

CBO

CEO

RN2301 to RN2304

Emitter-base voltage

−10

EBO

RN2305, RN2306

−5

Collector current

−100

100

°C

Collector power dissipation

RN2301 to RN2306

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1987-09

2014-03-01

12 3 4 5 6 7

中文翻译

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RN2304(TE85L,F) 替代型号

型号	品牌	替代类型	描述	数据表
DTA144EUAT106	ROHM	功能相似	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
SMUN5113T1G	ONSEMI	功能相似	Digital Transistors (BRT) R1 = 47 k, R2 = 47 k
MUN5113T1G	ONSEMI	功能相似	Bias Resistor Transistor

与RN2304(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2304(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2305	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2305	KEXIN	获取价格	PNP Transistor
RN2305(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2305(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR PNP 50V 0.1A SC-70
RN2305(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2305(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2306	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2306	KEXIN	获取价格	PNP Transistor
RN2306(T5LHLS,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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