Datasheet > RN2306(TE85L,F)

RN2306(TE85L,F)

更新时间： 2024-02-07 21:55:09

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	454K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-70

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中文翻译

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技术参数
数据手册

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RN2306(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.77	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2306(TE85L,F) 数据手册

RN2301~RN2306

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2301,RN2302,RN2303

RN2304,RN2305,RN2306

Unit: mm

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1301to1306

Equivalent Circuit

Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2301

RN2302

RN2303

RN2304

RN2305

RN2306

4.7

USM

2.2

4.7

JEDEC

―

JEITA

SC-70

TOSHIBA

Weight: 0.006g

2-2E1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

−10

−5

CBO

CEO

RN2301~2306

Collector-emitter voltage

RN2301~2304

RN2305, 2306

Emitter-base voltage

EBO

Collector current

−100

100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2301~2306

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-03-16

12 3 4 5 6 7

中文翻译

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与RN2306(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2307	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2307(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2308	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2308(TE85L,F)	TOSHIBA	获取价格	TRANSISTOR PNP 50V 0.1A SC-70
RN2309	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2310	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2310(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2310(TE85LF)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2310(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2E1A, SC-70, 3 PIN, BIP Gener
RN2310,LF(T	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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