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SMUN5112T1G PDF预览

SMUN5112T1G

更新时间： 2024-11-21 12:27:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
12页 149K
描述
Digital Transistors (BRT) R1 = 22 kOhm, R2 = 22 kOhm

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中文翻译

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SMUN5112T1G 技术参数

是否无铅：不含铅生命周期：Active
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：1.53Is Samacsys：N
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：60
JESD-609代码：e3湿度敏感等级：1
元件数量：1峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.31 W
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

SMUN5112T1G 数据手册

 浏览型号SMUN5112T1G的Datasheet PDF文件第2页浏览型号SMUN5112T1G的Datasheet PDF文件第3页浏览型号SMUN5112T1G的Datasheet PDF文件第4页浏览型号SMUN5112T1G的Datasheet PDF文件第5页浏览型号SMUN5112T1G的Datasheet PDF文件第6页浏览型号SMUN5112T1G的Datasheet PDF文件第7页 
MUN2112, MMUN2112L,  
MUN5112, DTA124EE,  
DTA124EM3, NSBA124EF3  
Digital Transistors (BRT)  
R1 = 22 kW, R2 = 22 kW  
http://onsemi.com  
PIN CONNECTIONS  
PNP Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
G
1
SOT−23  
CASE 318  
STYLE 6  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
XXX MG  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
SC−70/SOT−323  
CASE 419  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
V
CBO  
G
STYLE 3  
1
V
CEO  
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
40  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
SOT−1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2013 − Rev. 3  
DTA124E/D  
1234567...12

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SMUN5112T1G 替代型号

型号 品牌 替代类型 描述 数据表
FJX4003RTF ONSEMI

功能相似

 带偏置电阻的 PNP 外延硅晶体管

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 		Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k
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SMUN5115DW1T1G ONSEMI

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 		10kΩ, ∞ kΩ Dual PNP Bias Resistor Transistors
SMUN5115T1G ONSEMI

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 		Digital Transistors (BRT) R1 = 10 k, R2 =  k
SMUN5116DW1T1G ONSEMI

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 		Dual PNP Bias Resistor Transistors R1 = 4.7 kOhm, R2 =  kOhm
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 		Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
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 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

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