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SKM100GAL122D PDF预览

SKM100GAL122D

更新时间: 2024-11-24 19:43:55
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 局域网电动机控制晶体管
页数 文件大小 规格书
8页 322K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

SKM100GAL122D 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):100 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PUFM-X7
元件数量:1端子数量:7
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:625 W
最大功率耗散 (Abs):625 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):350 ns标称接通时间 (ton):100 ns
VCEsat-Max:4 VBase Number Matches:1

SKM100GAL122D 数据手册

 浏览型号SKM100GAL122D的Datasheet PDF文件第2页浏览型号SKM100GAL122D的Datasheet PDF文件第3页浏览型号SKM100GAL122D的Datasheet PDF文件第4页浏览型号SKM100GAL122D的Datasheet PDF文件第5页浏览型号SKM100GAL122D的Datasheet PDF文件第6页浏览型号SKM100GAL122D的Datasheet PDF文件第7页 

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