SKM100GB12V

更新时间： 2024-11-20 06:11:51

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	387K
描述
Target Data

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中文翻译

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数据手册

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SKM100GB12V 数据手册

SKM100GB12V

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

155

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

117

I_Cnom

100

I_CRM

I_CRM= 3xI_Cnom

300

V_GES

-20 ... 20

SEMITRANS^®2

V_CC= 720 V

V_GE≤ 20 V

V_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

121

T_j= 175 °C

SKM100GB12V

I_Fnom

I_FRM

I_FSM

T_j

100

Target Data

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

300

Features

• V_CE(sat)with positive temperature

coefficient

550

-40 ... 175

°C

Module

I_t(RMS)

T_stg

• High short circuit capability, self

limiting to 6 x Icnom

200

-40 ... 125

4000

°C

• Fast & soft inverse CAL diodes

• Large clearance (10 mm) and

creepage distances (20 mm)

• Isolated copper baseplate using DBC

Technology (Direct Copper Bonding)

• UL recognized, file no. E63532

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications*

• AC inverter drives

• UPS

• Electronic welders at fsw up to 20 kHz

I_C= 100 A

V_CE(sat)

T_j= 25 °C

1.75

2.2

_GE= 15 V

T_j= 150 °C

2.65

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.94

0.88

8.1

1.25

1.22

9.5

mΩ

V_GE= 15 V

13.2

6.5

14.3

V_GE(th)

I_CES

V_GE=V_CE, I_C= 4 mA

V_GE= 0 V

T_j= 25 °C

T_j= 150 °C

f = 1 MHz

0.1

0.3

Ω

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

6.01

0.59

0.589

1150

7.5

V_CE= 25 V

_GE= 0 V

R_Gint

t_d(on)

t_r

T_j= 150 °C

294

V_CC= 600 V

I_C= 100 A

_GE= ±15 V

E_on

t_d(off)

t_f

_{G on}= 1 Ω

_{G off}= 1 Ω

418

di/dt_on= 3230 A/µs

di/dt_off= 1330 A/µs

E_off

R_th(j-c)

K/W

per IGBT

0.27

Rev. 0 – 23.12.2009

12 3

中文翻译

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