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SKM100GB17E4 PDF预览

SKM100GB17E4

更新时间: 2024-11-24 21:22:11
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON
页数 文件大小 规格书
5页 312K
描述
Insulated Gate Bipolar Transistor

SKM100GB17E4 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.73
Base Number Matches:1

SKM100GB17E4 数据手册

 浏览型号SKM100GB17E4的Datasheet PDF文件第2页浏览型号SKM100GB17E4的Datasheet PDF文件第3页浏览型号SKM100GB17E4的Datasheet PDF文件第4页浏览型号SKM100GB17E4的Datasheet PDF文件第5页 
SKM100GB17E4  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
164  
127  
100  
300  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 1000 V  
-20 ... 20  
SEMITRANS® 2  
V
V
GE 15 V  
CES 1700 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
IGBT4 Modules  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
113  
83  
A
A
Tj = 175 °C  
SKM100GB17E4  
IFnom  
IFRM  
IFSM  
Tj  
100  
200  
650  
A
A
A
°C  
Preliminary Data  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
Features  
• IGBT4 = 4. generation medium fast  
trench IGBT  
-40 ... 175  
Module  
It(RMS)  
Tstg  
• CAL4 = Soft switching 4. generation  
CAL-diode  
Tterminal = 80 °C  
200  
-40 ... 125  
4000  
A
°C  
V
• Isolated copper baseplate using DBC  
technology (Direct Bonded Copper)  
• With integrated gate resistor  
• For higher switching frequenzies up to  
8kHz  
Visol  
AC sinus 50 Hz, t = 1 min  
Characteristics  
Symbol Conditions  
IGBT  
• UL recognized, file no. E63532  
min.  
typ.  
max.  
Unit  
Typical Applications*  
• AC inverter drives  
• UPS  
IC = 100 A  
Tj = 25 °C  
VCE(sat)  
1.90  
2.30  
2.20  
2.60  
V
V
V
GE = 15 V  
Tj = 150 °C  
• Electronic welders  
• Wind power  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
11.00  
16.00  
5.8  
0.9  
0.8  
13.00  
18.00  
6.4  
V
V
mΩ  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
Ω
ns  
ns  
mJ  
ns  
ns  
chiplevel  
• Public transport  
Remarks  
• Case temperature limited  
to Tc = 125°C max.  
• Recommended Top = -40 ... +150°C  
• Product reliability results valid  
for Tj = 150°C  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
VGE=VCE, IC = 4 mA  
VGE = 0 V  
5.2  
Tj = 25 °C  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
1
V
CE = 1700 V  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
9
VCE = 25 V  
GE = 0 V  
0.34  
0.29  
1000  
7.5  
200  
25  
29  
760  
140  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 1200 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
I
C = 100 A  
V
GE = +15/-15 V  
R
R
G on = 2 Ω  
G off = 2 Ω  
Tj = 150 °C  
Eoff  
45  
mJ  
Rth(j-c)  
per IGBT  
0.234  
K/W  
GB  
© by SEMIKRON  
Rev. 1 – 16.06.2014  
1

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