Datasheet > SKM100GB12V_11

SKM100GB12V_11

更新时间： 2024-11-20 09:24:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
5页	315K
描述
SEMITRANS

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数据手册

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SKM100GB12V_11 数据手册

SKM100GB12V

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

159

121

100

300

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

V_CC= 720 V

-20 ... 20

SEMITRANS^®2

_GE≤ 20 V

_CES≤ 1200 V

T_j= 125 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

121

100

300

550

T_j= 175 °C

SKM100GB12V

Features

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

• V-IGBT = 6. Generation Trench V-IGBT

(Fuji)

-40 ... 175

°C

Module

I_t(RMS)

T_stg

• CAL4 = Soft switching 4. Generation

CAL-diode

T_terminal= 80 °C

200

-40 ... 125

4000

°C

• Isolated copper baseplate using DBC

technology (Direct Copper Bonding)

• UL recognized, file no. E63532

• Increased power cycling capability

• With integrated gate resistor

• Low switching losses at high di/dt

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications*

• AC inverter drives

• UPS

I_C= 100 A

T_j= 25 °C

V_CE(sat)

1.75

2.20

2.50

_GE= 15 V

T_j= 150 °C

• Electronic welders

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.94

0.88

8.10

13.20

1.04

0.98

11.6

15.20

6.5

m



Remarks

• Case temperature limited to

T_c= 125°C max, recomm.

V_GE= 15 V

T_op= -40 ... +150°C, product

rel. results valid for T_j= 150°

V_GE(th)

I_CES

V_GE=V_CE, I_C= 4 mA

V_GE= 0 V

5.5

T_j= 25 °C

T_j= 150 °C

f = 1 MHz

0.1

0.3

_CE= 1200 V

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

6.01

0.59

0.589

1150

7.5

294

10.7

418

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

V_CC= 600 V

T_j= 150 °C

_C= 100 A

_GE= ±15 V

_{G on}= 1 

_{G off}= 1 

di/dt_on= 3230 A/µs

di/dt_off= 1330 A/µs

du/dt_off= 9350 V/

µs

T_j= 150 °C

E_off

8.7

R_th(j-c)

per IGBT

0.27

K/W

Rev. 5 – 23.03.2011

12 3 4 5

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