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SKM100GAR17E4 PDF预览

SKM100GAR17E4

更新时间: 2024-11-21 14:55:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 441K
描述
IGBT Modules SEMITRANS 2 (94x34x30)

SKM100GAR17E4 数据手册

 浏览型号SKM100GAR17E4的Datasheet PDF文件第2页浏览型号SKM100GAR17E4的Datasheet PDF文件第3页浏览型号SKM100GAR17E4的Datasheet PDF文件第4页浏览型号SKM100GAR17E4的Datasheet PDF文件第5页 
SKM100GAR17E4  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1700  
164  
127  
100  
300  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
-20 ... 20  
SEMITRANS® 2  
IGBT4 Modules  
SKM100GAR17E4  
Features  
VCC = 1000 V  
VGE 15 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
VCES 1700 V  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
113  
83  
100  
200  
650  
A
A
A
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
ꢀ IGBT4 = 4. generation medium fast  
trench IGBT (Infineon)  
-40 ... 175  
°C  
Freewheeling diode  
ꢀ CAL4 = Soft switching 4. Generation  
CAL-Diode  
ꢀ Insulated copper baseplate using DBC  
Technology (Direct Copper Bonding)  
ꢀ With integrated Gate resistor  
ꢀ For switching frequenzies up to 8kHz  
ꢀ UL recognized, file no. E63532  
Tc = 25 °C  
Tc = 80 °C  
IF  
113  
83  
100  
200  
650  
A
A
A
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
AC sinus 50 Hz, t = 1 min  
-40 ... 175  
°C  
Typical Applications*  
Module  
It(RMS)  
Tstg  
ꢀ Electronic welders  
ꢀ DC/DC – converter  
ꢀ Brake chopper  
200  
-40 ... 125  
4000  
A
°C  
V
ꢀ Switched reluctance motor  
Visol  
Remarks  
Characteristics  
ꢀ Case temperature limited  
to Tc = 125°C max.  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
ꢀ Recommended Top = -40 ... +150°C  
ꢀ Product reliability results valid  
for Tj = 150°C  
IC = 100 A  
Tj = 25 °C  
VCE(sat)  
1.90  
2.30  
2.20  
2.60  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
11  
16  
5.8  
0.9  
0.8  
13  
18  
6.4  
1
V
V
m  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
VGE=VCE, IC = 4 mA  
VGE = 0 V  
5.2  
Tj = 25 °C  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
V
CE = 1700 V  
Cies  
Coes  
Cres  
QG  
9
VCE = 25 V  
GE = 0 V  
0.34  
0.29  
800  
7.5  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 2.0 – 24.06.2015  
1

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