SKM100GAR17E4
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1700
164
127
100
300
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3xICnom
-20 ... 20
SEMITRANS® 2
IGBT4 Modules
SKM100GAR17E4
Features
VCC = 1000 V
VGE ≤ 15 V
Tj = 150 °C
tpsc
10
µs
°C
VCES ≤ 1700 V
Tj
-40 ... 175
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
113
83
100
200
650
A
A
A
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
ꢀ IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
-40 ... 175
°C
Freewheeling diode
ꢀ CAL4 = Soft switching 4. Generation
CAL-Diode
ꢀ Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
ꢀ With integrated Gate resistor
ꢀ For switching frequenzies up to 8kHz
ꢀ UL recognized, file no. E63532
Tc = 25 °C
Tc = 80 °C
IF
113
83
100
200
650
A
A
A
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
AC sinus 50 Hz, t = 1 min
-40 ... 175
°C
Typical Applications*
Module
It(RMS)
Tstg
ꢀ Electronic welders
ꢀ DC/DC – converter
ꢀ Brake chopper
200
-40 ... 125
4000
A
°C
V
ꢀ Switched reluctance motor
Visol
Remarks
Characteristics
ꢀ Case temperature limited
to Tc = 125°C max.
Symbol Conditions
IGBT
min.
typ.
max.
Unit
ꢀ Recommended Top = -40 ... +150°C
ꢀ Product reliability results valid
for Tj = 150°C
IC = 100 A
Tj = 25 °C
VCE(sat)
1.90
2.30
2.20
2.60
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
11
16
5.8
0.9
0.8
13
18
6.4
1
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
VGE=VCE, IC = 4 mA
VGE = 0 V
5.2
Tj = 25 °C
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
CE = 1700 V
Cies
Coes
Cres
QG
9
VCE = 25 V
GE = 0 V
0.34
0.29
800
7.5
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAR
© by SEMIKRON
Rev. 2.0 – 24.06.2015
1