Datasheet > SKM100GB12F4

SKM100GB12F4

更新时间： 2024-11-25 14:54:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	536K
描述
IGBT Modules SEMITRANS 2 (94x34x30)

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中文翻译

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数据手册

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SKM100GB12F4 数据手册

SKM100GB12F4

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

153

117

100

200

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2 x I_Cnom

V_CC= 800 V

-20 ... 20

SEMITRANS^®2

High Speed IGBT4 Modules

SKM100GB12F4

_GE≤ 15 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_j= 25 °C

V_RRM

I_F

1200

111

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

100

200

550

°C

Features*

• High speed trench and field-stop IGBT

• CAL4 ultra-fast = soft switching 4.

generation CAL-diode

I_FRM= 2xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

-40 ... 175

• Insulated copper baseplate using DBC

technology (Direct Bonded Copper)

• Increased power cycling capability

• For higher switching frequencies above

15kHz

Module

I_t(RMS)

T_stg

200

-40 ... 125

4000

°C

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• UL recognized, file no. E63532

Characteristics

Typical Applications

Symbol Conditions

IGBT

min.

typ.

max.

Unit

• UPS

• Electronic welders

• Inductive heating

• Switched mode power supplies

I_C= 100 A

T_j= 25 °C

V_CE(sat)

2.05

2.55

2.38

2.93

_GE= 15 V

T_j= 150 °C

chiplevel

Remarks

• Case temperature limited

to T_c= 125°C max.

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

1.10

0.95

9.5

5.8

1.28

1.13

6.4

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE=V_CE, I_C= 3.8 mA

V_GE= 0 V, V_CE= 1200 V, T_j= 25 °C

f = 1 MHz

5.1

6.2

0.41

0.35

567

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

6.6

315

_C= 100 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 3.9 Ω

_{G off}= 3.9 Ω

di/dt_on= 5000 A/µs

di/dt_off= 1300 A/µs

dv/dt = 4300 V/µs

L_s= 26 nH

T_j= 150 °C

E_off

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

0.238

K/W

0.122

Rev. 1.0 – 11.11.2019

12 3 4 5 6

中文翻译

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