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SKM100GAR12F4 PDF预览

SKM100GAR12F4

更新时间: 2024-11-21 14:54:43
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
6页 543K
描述
IGBT Modules SEMITRANS 2 (94x34x30)

SKM100GAR12F4 数据手册

 浏览型号SKM100GAR12F4的Datasheet PDF文件第2页浏览型号SKM100GAR12F4的Datasheet PDF文件第3页浏览型号SKM100GAR12F4的Datasheet PDF文件第4页浏览型号SKM100GAR12F4的Datasheet PDF文件第5页浏览型号SKM100GAR12F4的Datasheet PDF文件第6页 
SKM100GAR12F4  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
153  
117  
100  
200  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 2 x ICnom  
VCC = 800 V  
-20 ... 20  
SEMITRANS® 2  
High Speed IGBT4 Modules  
SKM100GAR12F4  
V
V
GE 15 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tj = 25 °C  
VRRM  
IF  
1200  
111  
82  
V
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
100  
200  
550  
A
A
A
°C  
Features*  
• High speed trench and field-stop IGBT  
• CAL4 ultra-fast = soft switching 4.  
generation CAL-diode  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
-40 ... 175  
• Insulated copper baseplate using DBC  
technology (Direct Bonded Copper)  
• Increased power cycling capability  
• For higher switching frequencies above  
15kHz  
Freewheeling diode  
Tj = 25 °C  
VRRM  
IF  
1200  
111  
82  
100  
200  
V
A
A
A
A
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
• UL recognized, file no. E63532  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 2xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
Typical Applications  
550  
-40 ... 175  
A
°C  
• Electronic welders  
• DC/DC – converter  
• Brake chopper  
Module  
It(RMS)  
Tstg  
• Switched reluctance motor  
200  
-40 ... 125  
4000  
A
°C  
V
Remarks  
• Case temperature limited  
to Tc = 125°C max.  
module without TIM  
Visol  
AC sinus 50 Hz, t = 1 min  
• Recommended Top = -40 ... +150°C  
• Product reliability results valid  
for Tj = 150°C  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
IC = 100 A  
Tj = 25 °C  
VCE(sat)  
2.05  
2.55  
2.38  
2.93  
V
V
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
1.10  
0.95  
9.5  
16  
5.8  
1.28  
1.13  
11  
18  
6.4  
1
V
V
mΩ  
mΩ  
V
mA  
mA  
nF  
nF  
nF  
nC  
Ω
chiplevel  
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
VGE=VCE, IC = 3.8 mA  
Tj = 25 °C  
5.1  
VGE = 0 V  
CE = 1200 V  
V
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
-
Cies  
Coes  
Cres  
QG  
6.2  
0.41  
0.35  
567  
0
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 2.0 – 15.11.2019  
1

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