SKM100GAR12F4
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
153
117
100
200
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 2 x ICnom
VCC = 800 V
-20 ... 20
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAR12F4
V
V
GE ≤ 15 V
CES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
Inverse diode
Tj = 25 °C
VRRM
IF
1200
111
82
V
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
100
200
550
A
A
A
°C
Features*
• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4.
generation CAL-diode
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
-40 ... 175
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above
15kHz
Freewheeling diode
Tj = 25 °C
VRRM
IF
1200
111
82
100
200
V
A
A
A
A
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
• UL recognized, file no. E63532
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Typical Applications
550
-40 ... 175
A
°C
• Electronic welders
• DC/DC – converter
• Brake chopper
Module
It(RMS)
Tstg
• Switched reluctance motor
200
-40 ... 125
4000
A
°C
V
Remarks
• Case temperature limited
to Tc = 125°C max.
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
IC = 100 A
Tj = 25 °C
VCE(sat)
2.05
2.55
2.38
2.93
V
V
V
GE = 15 V
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
1.10
0.95
9.5
16
5.8
1.28
1.13
11
18
6.4
1
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
chiplevel
VGE = 15 V
chiplevel
VGE(th)
ICES
VGE=VCE, IC = 3.8 mA
Tj = 25 °C
5.1
VGE = 0 V
CE = 1200 V
V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
-
Cies
Coes
Cres
QG
6.2
0.41
0.35
567
0
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
GAR
© by SEMIKRON
Rev. 2.0 – 15.11.2019
1