Datasheet > SKM100GB07E3

SKM100GB07E3

更新时间： 2024-11-21 14:57:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
4页	148K
描述
IGBT Modules SEMITRANS 2 (94x34x30)

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中文翻译

获取价格

数据手册

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SKM100GB07E3 数据手册

SKM100GB07E3

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

650

128

100

300

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

-20 ... 20

SEMITRANS^®2

V_CC= 360 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 650 V

T_j

-40 ... 175

Trench IGBT Modules

Inverse diode

T_j= 25 °C

V_RRM

I_F

650

142

104

200

820

SKM100GB07E3

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

Target Data

I_FRM

I_FSM

T_j

Features*

t_p= 10 ms, sin 180°, T_j= 25 °C

• V_CE(sat)with positive temperature

coefficient

-40 ... 175

°C

Module

I_t(RMS)

T_stg

• High short circuit capability, self limiting

to 6 x I_cnom

200

-40 ... 125

4000

°C

• Fast & soft switching inverse CAL

diodes

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• Insulated copper baseplate using DCB

Technology (Direct Copper Bonding)

• With integrated gate resistor

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications

• AC inverter drives

• UPS

I_C= 100 A

T_j= 25 °C

V_CE(sat)

1.45

1.70

1.85

2.10

• Electronic welders

• Wind power

_GE= 15 V

T_j= 150 °C

chiplevel

• Public transport

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.90

0.82

5.5

8.8

5.8

1.00

0.90

8.5

6.5

mΩ

chiplevel

Remarks

• Case temperature limited

to T_c= 125°C max.

V_GE= 15 V

chiplevel

• Recommended T_op= -40 ... +150°C

• Product reliability results valid

for T_j= 150°C

V_GE(th)

I_CES

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

V_GE=V_CE, I_C= 1.6 mA

V_GE= 0 V, V_CE= 650 V, T_j= 25 °C

f = 1 MHz

6.2

0.38

0.18

800

• Use of soft R_Gnecessary

V_CE= 25 V

f = 1 MHz

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 300 V

2.0

T_j= 150 °C

t.b.d.

3.2

t.b.d.

_C= 100 A

_GE= +15/-15 V

E_on

t_d(off)

t_f

_{G on}= 2 Ω

_{G off}= 11.2 Ω

T_j= 150 °C

E_off

4.2

R_th(j-c)

R_th(c-s)

per IGBT

per IGBT (λ_grease=0.81 W/(m*K))

per IGBT, pre-applied phase change

material

0.467

K/W

0.064

0.054

R_th(c-s)

K/W

Rev. 0.1 – 07.12.2021

12 3 4

中文翻译

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