5秒后页面跳转
SIR408DP PDF预览

SIR408DP

更新时间: 2024-11-18 09:25:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 92K
描述
N-Channel 25-V (D-S) MOSFET

SIR408DP 数据手册

 浏览型号SIR408DP的Datasheet PDF文件第2页浏览型号SIR408DP的Datasheet PDF文件第3页浏览型号SIR408DP的Datasheet PDF文件第4页浏览型号SIR408DP的Datasheet PDF文件第5页浏览型号SIR408DP的Datasheet PDF文件第6页浏览型号SIR408DP的Datasheet PDF文件第7页 
SiR408DP  
Vishay Siliconix  
N-Channel 25-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
Definition  
TrenchFET® Power MOSFET  
100 % Rg Tested  
100 % UIS Tested  
50a  
50a  
0.0063 at VGS = 10 V  
0.008 at VGS = 4.5 V  
25  
9.3 nC  
PowerPAK® SO-8  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
S
Server  
POL  
DC/DC High Side  
6.15 mm  
5.15 mm  
1
D
S
2
S
3
G
4
D
8
D
G
7
D
6
D
5
Bottom View  
S
Ordering Information:  
SiR408DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
25  
Unit  
V
20  
50a  
50a  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
21.5b, c  
17.2b, c  
70  
A
Pulsed Drain Current  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
EAS  
35  
L = 0.1 mH  
mJ  
A
61  
37.2  
4b, c  
T
C = 25 °C  
Continuous Source-Drain Diode Current  
IS  
TA = 25 °C  
TC = 25 °C  
44.6  
T
C = 70 °C  
28.6  
Maximum Power Dissipation  
PD  
W
4.8b, c  
3.1b, c  
- 55 to 150  
260  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
RthJC  
Typical  
21  
Maximum  
Unit  
t 10 s  
Steady State  
26  
°C/W  
2.4  
2.8  
Notes:  
a. Based on TC = 25 °C. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 70 °C/W.  
Document Number: 65036  
S09-1396-Rev. A, 20-Jul-09  
www.vishay.com  
1

与SIR408DP相关器件

型号 品牌 获取价格 描述 数据表
SIR408DP-T1-GE3 VISHAY

获取价格

N-Channel 25-V (D-S) MOSFET
SIR410DP VISHAY

获取价格

N-Channel 20-V (D-S) MOSFET
SIR410DP-T1-GE3 VISHAY

获取价格

MOSFET N-CH D-S 20V PPAK 8SOIC
SIR412DP VISHAY

获取价格

N-Channel 25-V (D-S) MOSFET
SIR412DP-T1-GE3 VISHAY

获取价格

N-Channel 25-V (D-S) MOSFET
SIR414DP VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SIR416DP VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SIR416DP-T1-GE3 VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SIR418DP VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET
SIR418DP-T1-GE3 VISHAY

获取价格

N-Channel 40-V (D-S) MOSFET