New Product
SiR414DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
50
Definition
0.0028 at VGS = 10 V
0.0032 at VGS = 4.5 V
•
•
•
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
40
38 nC
50
PowerPAK® SO-8
APPLICATIONS
•
•
Synchronous Rectification
Secondary Side DC/DC
S
6.15 mm
5.15 mm
1
S
D
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
40
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
50a
50a
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
33b, c
26b, c
70
50a
4.9b, c
40
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
mJ
W
80
83
53
5.4b, c
3.4b, c
T
C = 25 °C
TC = 70 °C
A = 25 °C
PD
Maximum Power Dissipation
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 s
18
23
°C/W
RthJC
Steady State
1.0
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?64727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 64727
S09-0319-Rev. A, 02-Mar-09
www.vishay.com
1