Datasheet > SiR4604DP

SiR4604DP

更新时间： 2024-11-19 14:54:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	172K
描述
N-Channel 60 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiR4604DP 数据手册

SiR4604DP

Vishay Siliconix

www.vishay.com

N-Channel 60 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8 Single

• TrenchFET^®Gen IV power MOSFET

• Very low R_DS- Q_gfigure-of-merit (FOM)

• Tuned for the lowest R_DS- Q_ossFOM

• 100 % R_gand UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• Primary side switch

PRODUCT SUMMARY

• DC/DC converter

V_DS(V)

_DS(on)max. (Ω) at V_GS= 10 V

0.0095

0.0124

11.2

• Motor drive switch

R_DS(on)max. (Ω) at V_GS= 7.5 V

Q_gtyp. (nC)

• Battery and load switch

• Industrial

_D(A) ^a

49.3

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SIR4604DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

49.3

39.5

15.1 ^{b, c}

12.1 ^{b, c}

100

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

37.8

3.5 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

41.6

26.6

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

3.9

2.5 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

3.0

°C/W

Maximum junction-to-case (drain)

2.4

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

S22-0032-Rev. A, 17-Jan-2022

Document Number: 62027

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SiR4604DP相关器件

型号	品牌	获取价格	描述	数据表
SiR4604LDP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SiR4606DP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SiR4608DP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SiR4608LDP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SIR460DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIR460DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 30V PPAK 8SOIC
SIR462DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIR462DP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIR464DP	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIR464DP-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET

与SiR4604DP相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

SiR4604DP

SiR4604DP 数据手册

与SiR4604DP相关器件

与SiR4604DP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiR4604DP

SiR4604DP 数据手册

与SiR4604DP相关器件

与SiR4604DP相关文章

您还可以找

您在本页遇到什么问题？