New Product
SiR464DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, e
50
TrenchFET® Power MOSFET
RoHS
0.0031 at VGS = 10 V
0.0038 at VGS = 4.5 V
PowerPAK SO-8
COMPLIANT
100 % Rg and UIS Tested
30
26.5 nC
50
APPLICATIONS
•
DC/DC Conversion
- Low-Side Switch
D
S
•
•
Notebook
Server
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
S
Bottom View
Ordering Information: SiR464DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limit
30
Unit
V
VGS
20
50e
T
C = 25 °C
50e
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
29.5b, c
23.5b, c
70
50e
4.7b, c
40
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
EAS
mJ
W
80
69
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
44.4
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)f, g
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
Typical
19
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
24
°C/W
1.2
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 68871
S-82017-Rev. A, 01-Sep-08
www.vishay.com
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