SiR436DP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
Halogen-free
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
40
TrenchFET® Power MOSFET
100 % Rg Tested
0.0046 at VGS = 10 V
0.0062 at VGS = 4.5 V
25
13 nC
• 100 % UIS Tested
40
APPLICATIONS
PowerPAK SO-8
•
Low-Side Switch
• Server, VRM
S
6.15 mm
5.15 mm
D
1
S
2
S
3
G
4
D
8
D
G
7
D
6
D
5
Bottom View
S
N-Channel MOSFET
Ordering Information: SiR436DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
25
Unit
V
20
40a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
40a
Continuous Drain Current (TJ = 150 °C)
ID
25b, c
20b, c
80
A
Pulsed Drain Current
Avalanche Current
Avalanche Energy
IDM
IAS
EAS
40
80
40a
4.1b, c
50
L = 0.1 mH
mJ
A
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IS
TC = 25 °C
C = 70 °C
T
32
Maximum Power Dissipation
PD
W
5b, c
3.2b, c
- 55 to 150
260
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
20
Maximum
Unit
t ≤ 10 s
Steady State
25
°C/W
2.0
2.5
Notes:
a. Based on TC = 25 °C. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 69011
S-82666-Rev. A, 03-Nov-08
www.vishay.com
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