Datasheet > SIR410DP

SIR410DP

更新时间： 2024-11-18 06:11:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	108K
描述
N-Channel 20-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIR410DP 数据手册

SiR410DP

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

TrenchFET^®Power MOSFET

100 % R_gTested

0.0048 at V_GS= 10 V

0.0063 at V_GS= 4.5 V

12.7 nC

• 100 % UIS Tested

APPLICATIONS

PowerPAK^®SO-8

•

DC/DC Converter

- Notebook

- POL

6.15 mm

5.15 mm

Bottom View

Ordering Information: SiR410DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

35^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

35^a

Continuous Drain Current (T_J= 150 °C)

I_D

23^{b, c}

18.6^{b, c}

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

E_AS

3.5^{b, c}

L = 0.1 mH

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_S

T_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

4.2^{b, c}

2.7^{b, c}

- 55 to 150

260

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

2.9

3.5

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

Document Number: 68997

S-82586-Rev. A, 27-Oct-08

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

与SIR410DP相关器件

型号	品牌	获取价格	描述	数据表
SIR410DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 20V PPAK 8SOIC
SIR412DP	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIR412DP-T1-GE3	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIR414DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR416DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR416DP-T1-GE3	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR418DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR418DP-T1-GE3	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR422DP	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIR422DP (KIR422DP)	KEXIN	获取价格	N-Channel MOSFET