Datasheet > SiR403EDP

SiR403EDP

更新时间： 2024-11-19 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	385K
描述
P-Channel 30 V (D-S) MOSFET

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SiR403EDP 数据手册

SiR403EDP

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8 Single

• Extended V_GSrange ( 2ꢀ V) for adaptor

switch applications

ꢀ

• Extremely low R_DS(on)

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Typical ESD performance: 4000 V (HBM)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

• Adaptor switch, load switch

• Power management

-30

0.006ꢀ

0.0082

0.011ꢀ

R_DS(on)max. () at V_GS= -10 V

R_DS(on)max. () at V_GS= -6 V

R_DS(on)max. () at V_GS= -4.ꢀ V

Q_gtyp. (nC)

• Notebook computers and

portable battery packs

I_D(A) ^{a, e}

-40

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiR403EDP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 2ꢀ °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

2ꢀ

T_C= 2ꢀ °C

T_C= 70 °C

T_A= 2ꢀ °C

T_A= 70 °C

-40 ^e

Continuous drain current (T_J= 1ꢀ0 °C)

I_D

-21.9 ^{b, c}

-17.ꢀ ^{b, c}

-60

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 2ꢀ °C

T_A= 2ꢀ °C

-40 ^e

-4.2 ^{b, c}

-40

ꢀ6.8

36.4

ꢀ ^{b, c}

3.2 ^{b, c}

-ꢀꢀ to +1ꢀ0

260

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 2ꢀ °C

T_C= 70 °C

T_A= 2ꢀ °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{f, g}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, d}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

2ꢀ

2.2

°C/W

1.7

Notes

a. Based on T_C= 2ꢀ °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 68 °C/W

e. Package limited

f. See solder profile (www.vishay.com/doc?732ꢀ7). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

S13-0302-Rev. A, 11-Feb-13

Document Number: 66744

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiR403EDP相关器件

型号	品牌	获取价格	描述	数据表
SIR403EDP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 40A I(D), 30V, 0.0065ohm, 1-Element, P-Channel, Silicon, Me
SIR404DP	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIR404DP-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIR406DP	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIR406DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 25V PPAK 8SOIC
SIR408DP	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIR408DP-T1-GE3	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIR410DP	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIR410DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 20V PPAK 8SOIC
SIR412DP	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET

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