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SIHFZ46-E3 PDF预览

SIHFZ46-E3

更新时间: 2024-11-02 21:07:51
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 956K
描述
TRANSISTOR 50 A, 50 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power

SIHFZ46-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.19其他特性:FAST SWITCHING
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):220 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHFZ46-E3 数据手册

 浏览型号SIHFZ46-E3的Datasheet PDF文件第2页浏览型号SIHFZ46-E3的Datasheet PDF文件第3页浏览型号SIHFZ46-E3的Datasheet PDF文件第4页浏览型号SIHFZ46-E3的Datasheet PDF文件第5页浏览型号SIHFZ46-E3的Datasheet PDF文件第6页浏览型号SIHFZ46-E3的Datasheet PDF文件第7页 
IRFZ46, SiHFZ46  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
50  
Available  
• 175 °C Operating Temperature  
• Fast Switching  
RDS(on) (Ω)  
VGS = 10 V  
0.024  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
66  
21  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
25  
Configuration  
Single  
DESCRIPTION  
D
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
TO-220  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
S
G
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRFZ46PbF  
SiHFZ46-E3  
IRFZ46  
Lead (Pb)-free  
SnPb  
SiHFZ46  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
50  
V
Gate-Source Voltage  
VGS  
20  
Continuous Drain Currente  
TC = 25 °C  
50  
38  
VGS at 10 V  
ID  
A
Continuous Drain Current  
TC = 100 °C  
Pulsed Drain Currenta  
IDM  
220  
Linear Derating Factor  
1.0  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
EAS  
PD  
100  
T
C = 25 °C  
150  
W
dV/dt  
TJ, Tstg  
4.5  
V/ns  
- 55 to + 175  
300  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 34 µH, RG = 25 Ω, IAS = 54 A (see fig. 12).  
c. ISD 54 A, dI/dt 250 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case  
e. Current limited by the package, (die current = 54 A).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90372  
S09-0070-Rev. A, 02-Feb-09  
For technical questions, contact: hvmos.techsupport@vishay.com  
www.vishay.com  
1

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